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LDTC144TM3T5G PDF даташит

Спецификация LDTC144TM3T5G изготовлена ​​​​«LRC» и имеет функцию, называемую «Bias Resistor Transistors».

Детали детали

Номер произв LDTC144TM3T5G
Описание Bias Resistor Transistors
Производители LRC
логотип LRC логотип 

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LDTC144TM3T5G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors LDTC114EM3T5G Series
With Monolithic Bias Resistor Network S-LDTC114EM3T5G Series
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
3
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-723 package
2
which is designed for low power surface mount applications.
1
ƽSimplifies Circuit Design
ƽReduces Board Space
SOT-723
ƽReduces Component Count
ƽThe SOT-723 Package can be Soldered using Wave or Reflow.
ƽAvailable in 4 mm, 8000 Unit Tape & Reel
ƽThese are Pb-Free Devices.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
PIN 1
BASE
(INPUT)
R1
R2
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Collector Current
IC
THERMAL CHARACTERISTICS
Characteristic
Symbol
50
50
100
Max
Vdc
Vdc
mAdc
Unit
MARKING DIAGRAM
3
XX M
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
PD
RθJA
260 (Note 1)
600 (Note 2)
2.0 (Note 1)
4.8 (Note 2)
480 (Note 1)
205 (Note 2)
mW
mW/°C
°C/W
12
xx = Specific Device Code
M = Date Code
Junction Temperature
TJ 150
°C
Storage Temperature Range
Tstg –55 to +150 °C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Rev.O 1/14









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LDTC144TM3T5G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
S-LDTC114EM3T5G
S-LDTC124EM3T5G
S-LDTC144EM3T5G
S-LDTC114YM3T5G
S-LDTC114TM3T5G
S-LDTC143TM3T5G
S-LDTC123EM3T5G
S-LDTC143EM3T5G
S-LDTC143ZM3T5G
S-LDTC124XM3T5G
S-LDTC123JM3T5G
S-LDTC115EM3T5G
S-LDTC144WM3T5G
S-LDTC144TM3T5G
8A
8B
8C
8D
94
8F
8H
8J
8K
8L
8M
8N
8P
8T
R1 (K)
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
47
R2 (K)
10
22
47
47
2.2
4.7
47
47
47
100
22
Package
SOT−723
Shipping
8000/Tape & Reel
Rev.O 2/14









No Preview Available !

LDTC144TM3T5G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
ICBO
ICEO
IEBO
− 100 nAdc
− 500 nAdc
− 0.5 mAdc
− 0.2
− 0.1
− 0.2
− 0.9
− 1.9
− 2.3
− 1.5
− 0.18
− 0.13
− 0.2
− 0.05
− 0.13
− 0.2
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS (Note 3)
V(BR)CBO
V(BR)CEO
50
50
− Vdc
− Vdc
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
LDTC114EM3T5G
hFE
35
60
LDTC124EM3T5G
60 100
LDTC144EM3T5G
80 140
LDTC114YM3T5G
80 140
LDTC114TM3T5G
160 350
LDTC143TM3T5G
160 350
LDTC123EM3T5G
8.0 15
LDTC143EM3T5G
15 30
LDTC143ZM3T5G
80 200
LDTC124XM3T5G
80 150
LDTC123JM3T5G
80 140
LDTC115EM3T5G
80 150
LDTC144WM3T5G
80 140
LDTC144TM3T5G
160 350
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
LDTC123EM3T5G
(IC = 10 mA, IB = 1 mA) LDTC143TM3T5G/LDTC114TM3T5G/
LDTC143EM3T5G/LDTC143ZM3T5G/
LDTC124XM3T5G/LDTC144TM3T5G
VCE(sat)
− 0.25 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
LDTC114EM3T5G
LDTC124EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC144EM3T5G
LDTC144TM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
VOL
Vdc
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
− 0.2
Rev.O 3/14










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