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PDF C5883 Data sheet ( Hoja de datos )
| Número de pieza | C5883 | |
| Descripción | SMALL-SIGNAL TRANSISTOR | |
| Fabricantes | ISAHAYA | |
| Logotipo |  |
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DESCRIPTION
2SC5883 is a ultra super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for high frequency application.
Since it is a super-thin flat lead type package,a high-density
mounting are possible.
FEATURE
●Super-thin flat lead type package.
t=0.45mm
●High gain bandwidth product.
fT=8.0GHz
●High gain, low noise.
●Can operate at low voltage.
〈SMALL-SIGNAL TRANSISTOR〉
2SC5883
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
Unit：ｍｍ
0.2 0.8 0.2
①
②③
APPLICATION
For TV tuners, high frequency amplifier , celluar phone system.
JEITA：
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
VCBO Collector to Base voltage
VCEO Collector to Emitter voltage
VEBO Emitter to Base voltage
I O Collector current
Pc Collector dissipation
Tj Junction temperature
Tstg Storage temperature
Ratings
15
6
1.5
50
80
＋125
-55～＋125
Unit
V
V
V
mA
mW
℃
℃
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
Collector cut off current
Emitter cut off current
DC forward current gain
Gain bandwidth product
Collector output capacitance
Insertion power gain
Noise figure
ICBO
IEBO
hFE
fT
Cob
|S21|2
NF
V CB=10V, I E=0mA
V EB=1V, I C=0mA
V CE=5V, I C=10mA
V CE=5V, I E=10mA
V CB=5V, I E=0mA,f=1MHz
V CE=5V, I C=10mA,f=1GHz
V CE=5V, I C=5mA,f=1GHz
Limits
Min Typ Max
Unit
- - 1.0 μA
- - 1.0 μA
50 - 250
5.0 8.0
- GHz
- 0.8 - pF
9.0 12.0
-
dB
- 1.4 - dB
ISAHAYA ELECTRONICS CORPORATION
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C5883.PDF ] | |
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