DataSheet26.com

L2SA812RLT1G PDF даташит

Спецификация L2SA812RLT1G изготовлена ​​​​«Leshan Radio Company» и имеет функцию, называемую «General Purpose Transistors».

Детали детали

Номер произв L2SA812RLT1G
Описание General Purpose Transistors
Производители Leshan Radio Company
логотип Leshan Radio Company логотип 

5 Pages
scroll

No Preview Available !

L2SA812RLT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
ƽHigh Voltage: VCEO = -50 V.
ƽEpitaxial planar type.
ƽNPN complement: L2SC1623
ƽPb-Free Package is available.
www.DataSheet4U.DcoEmVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SA812QLT1
M8
3000/Tape&Reel
L2SA812QLT1G
L2SA812RLT1
M8
(Pb-Free)
M6
3000/Tape&Reel
3000/Tape&Reel
L2SA812RLT1G
L2SA812SLT1
M6
(Pb-Free)
M7
3000/Tape&Reel
3000/Tape&Reel
L2SA812SLT1G
M7
(Pb-Free)
MAXIMUM RATINGS
3000/Tape&Reel
Rating
Symbol
L2SA812
Unit
Collector-Emitter Voltage
VCEO -50 V
Collector-Base Voltage
VCBO -60 V
Emitter-Base Voltage
VEBO -6 V
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
-150
mAdc
Characteristic
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Symbol
PD
R θJA
Max
200
1.8
556
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
PD
R θJA
Tj ,Tstg
200
2.4
417
-55 to +150
L2SA812*LT1
3
1
2
SOT-23
1
BASE
3
COLLECTOR
2
EMITTER
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
L2SA812-1/5









No Preview Available !

L2SA812RLT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
L2SA812*LT1
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1mA)
Emitter-Base Breakdown Voltage
www.DataSheet4U.com
(IE=-50 µΑ )
Collector-Base Breakdown Voltage
(IC=-50 µA)
Collector Cutoff Current
(VCB=-50V)
Emitter Cutoff Current (VBE=-6V)
V(BR)CEO
V(BR)EBO
V(BR)CBO
-50
-6
-60
ICBO
IEBO
-
--
--
--
- -0.1
-0.1
ON CHARACTERISTICS
DC Current Gain
(IC=-1mA,VCE=-6.0V)
Collector-Emitter Saturation Voltage
(IC=-100mA,IB=-10mA)
Base -Emitter On Voltage
IE=-1.0mA,VCE=-6.0V)
hFE
VCE(sat)
VBE
120
-
-0.58
-
-0.18
-0.62
560
-0.3
-0.68
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(VCE=-6.0V,IE =-10mA)
Ft - 180
Output Capacitance(VCE = -10V, IE=0, f=1.0MHz) Cobo
-
4.5
-
-
hFE Values are classified as followes
NOTE:
*
h
FE
Q
120~270
R
180~390
S
270~560
Unit
V
V
V
µA
µA
V
V
MHz
pF
L2SA812-2/5









No Preview Available !

L2SA812RLT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
Fig.1 Grounded emitter propagation characteristics
–50
–20
–10
–50
www.DataSheet4U.com
–2
–1
–0.5
T A = 100°C
25°C
– 40°C
V = –10 V
CE
–0.2
–0.1
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6
V BE , BASE TO EMITTER VOLTAGE(V)
Fig.3 Grounded emitter output characteristics( )
–100
T A = 25°C
500
–80 450
400
350
300
–60
–40
–20
–250
–200
–150
–100
–50 µA
0 I B =0
0
–1 –2
–3
–4 –5
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Fig.5 DC current gain vs. collector current ( )
500
T A = 100°C
25°C
–40°C
200
100
50
–0.2 –0.5 –1 –2
VCE= – 6V
–5 –10 –20
–50 –100
I , COLLECTOR CURRENT (mA)
C
L2SA812*LT1
Fig.2 Grounded emitter output characteristics( )
–10
T A = 25°C
–35.0
–31.5
–8 –28.0
–24.5
–21.0
–6
–17.5
–14.0
–4
–10.5
–7.0
–2
–3.5µA
0 I B =0
0
–0.4 –0.8
–1.2
–1.6
–2.0
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Fig.4 DC current gain vs. collector current ( )
500
T A = 25°C
VCE= –5 V
–3V
–1V
200
100
50
–0.2 –0.5 –1 –2
–5 –10 –20
I C, COLLECTOR CURRENT (mA)
–50 –100
Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
–1
T A = 25°C
–0.5
–0.2
–0.1
–0.05
I C /I B = 50
20
10
–0.2 –0.5 –1 –2
–5 –10 –20
I C, COLLECTOR CURRENT (mA)
–50 –100
L2SA812-3/5










Скачать PDF:

[ L2SA812RLT1G.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
L2SA812RLT1General Purpose TransistorsLeshan Radio Company
Leshan Radio Company
L2SA812RLT1GGeneral Purpose TransistorsLeshan Radio Company
Leshan Radio Company

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск