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PDF L2SA812QLT1G Data sheet ( Hoja de datos )
| Número de pieza | L2SA812QLT1G | |
| Descripción | General Purpose Transistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
ƽHigh Voltage: VCEO = -50 V.
ƽEpitaxial planar type.
ƽNPN complement: L2SC1623
ƽPb-Free Package is available.
www.DataSheet4U.DcoEmVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SA812QLT1
M8
3000/Tape&Reel
L2SA812QLT1G
L2SA812RLT1
M8
(Pb-Free)
M6
3000/Tape&Reel
3000/Tape&Reel
L2SA812RLT1G
L2SA812SLT1
M6
(Pb-Free)
M7
3000/Tape&Reel
3000/Tape&Reel
L2SA812SLT1G
M7
(Pb-Free)
MAXIMUM RATINGS
3000/Tape&Reel
Rating
Symbol
L2SA812
Unit
Collector-Emitter Voltage
VCEO -50 V
Collector-Base Voltage
VCBO -60 V
Emitter-Base Voltage
VEBO -6 V
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
-150
mAdc
Characteristic
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Symbol
PD
R θJA
Max
200
1.8
556
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
PD
R θJA
Tj ,Tstg
200
2.4
417
-55 to +150
L2SA812*LT1
3
1
2
SOT-23
1
BASE
3
COLLECTOR
2
EMITTER
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
L2SA812-1/5
1 page  
LESHAN RADIO COMPANY, LTD.
L2SA812*LT1
www.DataSheet4U.com
V
A
L
3
BS
12
G
C
D
H
K
0.037
0.95
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
J K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
L2SA812-5/5
5 Page | ||
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