FML34S PDF даташит
Спецификация FML34S изготовлена «Thinki Semiconductor» и имеет функцию, называемую «400 Volt Common Cathode Fast Recovery Epitaxial Diode». |
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Детали детали
Номер произв | FML34S |
Описание | 400 Volt Common Cathode Fast Recovery Epitaxial Diode |
Производители | Thinki Semiconductor |
логотип |
3 Pages
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FML34S
®
FML34S
Pb
Pb Free Plating Product
20 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-247AD/TO-3P
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
—
Anode
Cathode
Anode
GENERAL DESCRIPTION
FML34S using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
V RRM
I F(AV)
I F(RMS)
I FSM
PD
TJ
T STG
Torque
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
TC=110°C, Per Diode
TC=110°C, Per Package
TC=110°C, Per Diode
TJ=45°C, t=10ms, 50Hz, Sine
Recommended(M3)
400
400
10
20
14
100
83
-40 to +150
-40 to +150
1.1
V
V
A
A
A
A
W
°C
°C
N·m
R θJC
Thermal Resistance
Junction-to-Case
1.5 °C /W
Weight
6g
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IRM Reverse Leakage Current
VR=400V
VR=400V, TJ=125°C
-- -- 15 µA
-- -- 250 µA
VF Forward Voltage
I F =10A
IF=10A, TJ=125°C
-- 1.00 --
-- 0.87 --
V
V
trr Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs -- 20 --
ns
trr Reverse Recovery Time
VR=200V, IF=10A
-- 25 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 2.2 --
A
trr Reverse Recovery Time
VR=200V, IF=10A
-- 46 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 5.5 --
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/
No Preview Available ! |
FML34S
®
20
16 TJ =125°C
12
8
TJ =25°C
4
0
0 0.25 0.50 0.75 1.00 1.25 1.50
VF(V)
Fig1. Forward Voltage Drop vs Forward Current
25
VR=200V
TJ =125°C
20
IF=20A
15
10
5
IF=10A
IF=5A
0
0 200 400 600 800 1000
diF/dt(A/μs)
Fig3. Reverse Recovery Current vs diF/dt
1.2
1
0.8
0.6
trr
0.4 IRRM
0.2 Qrr
0
0 25 50 75 100 125 150
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
70
VR=200V
60 TJ =125°C
IF=20A
50
40
30
IF=10A
20 IF=5A
10
0
0 200 400 600 800 1000
diF/dt(A/μs)
Fig2. Reverse Recovery Time vs diF/dt
250
VR=200V
TJ =125°C
200
IF=20A
150 IF=10A
IF=5A
100
50
0
0 200 400 600 800 1000
diF/dt(A/μs)
Fig4. Reverse Recovery Charge vs diF/dt
10
1
10-1
10-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-310-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/3
http://www.thinkisemi.com/
No Preview Available ! |
FML34S
®
IF trr
dIF/dt
Qrr
IRRM
0.9 IRRM
0.25 IRRM
Fig7. Diode Reverse Recovery Test Circuit and Waveform
Dimensions in Millimeters
Fig8. Package Outline
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 3/3
http://www.thinkisemi.com/
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Номер в каталоге | Описание | Производители |
FML34S | 400 Volt Common Cathode Fast Recovery Epitaxial Diode | Thinki Semiconductor |
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