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PDF P14NK60ZFP Data sheet ( Hoja de datos )
| Número de pieza | P14NK60ZFP | |
| Descripción | STP14NK60ZFP | |
| Fabricantes | STMicroelectronics | |
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STP14NK60Z - STP14NK60ZFP
STB14NK60Z/-1 - STW14NK60Z
N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247
Zener-protected SuperMESHTM Power MOSFET
General features
Type
STP14NK60Z
STP14NK60ZFP
STB14NK60Z
STB14NK60Z-1
STW14NK60Z
VDSS
600V
600V
600V
600V
600V
RDS(on) ID
<0.5Ω 13.5A
<0.5Ω 13.5A
<0.5Ω 13.5A
<0.5Ω 13.5A
<0.5Ω 13.5A
Pw
160W
40W
160W
160W
160W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
3
2
1
TO-220
3
1
D2PAK
TO-247
3
2
1
TO-220FP
123
I2PAK
Internal schematic diagram
Order codes
Part number
STP14NK60Z
STP14NK60ZFP
STB14NK60ZT4
STB14NK60Z-1
STW14NK60Z
July 2006
Marking
P14NK60Z
P14NK60ZFP
B14NK60Z
B14NK60Z
W14NK60Z
Package
TO-220
TO-220FP
D2PAK
I2PAK
TO-247
Rev 7
Packaging
Tube
Tube
Tape & reel
Tube
Tube
1/19
www.st.com
19
1 page  
STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z Electrical characteris-
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 1mA, VGS= 0
VDS = Max rating,
VDS = Max rating @125°C
VGS = ±30V
VDS= VGS, ID = 100µA
VGS= 10V, ID= 6A
600
3
3.75
0.45
1
50
±10
4.5
0.5
V
µA
µA
nA
V
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15V, ID = 6A
11 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
2220
240
57
pF
pF
pF
Coss
(2)
eq .
Equivalent output
capacitance
VGS=0, VDS =0V to 480V
122 pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=480V, ID = 12A
VGS =10V
75 nC
13.2 nC
38.6 nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
5/19
5 Page 
STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z Package mechanical
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/19
11 Page | ||
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| PDF Descargar | [ Datasheet P14NK60ZFP.PDF ] | |
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