|
|
Número de pieza | FDD8453LZ_F085 | |
Descripción | N-Channel Power Trench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDD8453LZ_F085 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! FDD8453LZ_F085
N-Channel Power Trench® MOSFET
40V, 50A, 6.5mΩ
Aug 2012
Features
Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A
Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A
HBM ESD protection level > 7kv typical
RoHS Compliant
Qualified to AEC Q101
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
has been especially tailored to minimize the on-state
resistance and switching loss. G-S zener has been added
to enhance ESD voltage level.
Applications
Inverter
Synchronous Rectifier
Package
D
G
S
D-PAK
(TO-252)
©2012 Fairchild Semiconductor Corporation
FDD8453LZ_F085 Rev. C1
Symbol
D
G
S
1 www.fairchildsemi.com
1 page Typical Characteristics
1000
100
100us
10
OPERATION IN THIS
AREA MAY BE
1 LIMITED BY rDS(on)
SINGLE PULSE
1ms
TJ = MAX RATED
10ms
TC = 25oC
DC
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 5. Forward Bias Safe Operating Area
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
75 VDD = 5V
50
TJ = 175oC
25
0
0
TJ = 25oC
TJ = -55oC
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
5
1000
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.001
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
1000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
100
VGS = 10V
75
50
VGS = 4V
VGS = 3.5V
VGS = 4.5V
25
0
0.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 3V
0.4 0.8 1.2 1.6 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
21
ID = 15A PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
18
15
12 TJ = 175oC
9
6 TJ = 25oC
3
2468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
2.2
PULSE DURATION = 80μs
2.0 DUTY CYCLE = 0.5% MAX
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
ID = 15A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD8453LZ_F085 Rev. C1
5
www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDD8453LZ_F085.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDD8453LZ_F085 | N-Channel Power Trench MOSFET | Fairchild Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |