W12NK95Z PDF даташит
Спецификация W12NK95Z изготовлена «STMicroelectronics» и имеет функцию, называемую «STW12NK95Z». |
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Детали детали
Номер произв | W12NK95Z |
Описание | STW12NK95Z |
Производители | STMicroelectronics |
логотип |
14 Pages
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STW11NK100Z
STW12NK95Z
N-channel 950V - 0.69Ω - 10A - TO-247
Zener - Protected SuperMESH™ PowerMOSFET
General features
www.DataSheet4U.com Type
VDSS
(@Tjmax)
RDS(on)
ID
PW
STW12NK95Z 950 V < 0.90Ω 10 A 230W
■ Gate charge minimized
■ 100% avalanche tested
■ Extremely high dv/dt capability
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
■ Switching application
TO-247
Internal schematic diagram
Order codes
Part number
STW12NK95Z
Marking
W12NK95Z
Package
TO-247
Packaging
Tube
August 2006
Rev 2
1/14
www.st.com
14
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Contents
Contents
STW12NK95Z
1
2
www.DataSheet4U.com
3
4
5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
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STW12NK95Z
1 Electrical ratings
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Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(1)
PTOT
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20KΩ)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
VESD (G-S) Gate source ESD (HBM-C=100pF, R=1,5KΩ)
dv/dt(2) Peak diode recovery voltage slope
TJ Operating junction temperature
Tstg Storage temperature
1. Pulse width limited by safe operating area
2. ISD ≤10A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Iar, Vdd=50V)
Electrical ratings
Value
950
950
± 30
10
6.3
40
230
1.85
6000
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
Value
0.54
50
300
Unit
°C/W
°C/W
°C
Value
10
500
Unit
A
mJ
3/14
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W12NK95Z | STW12NK95Z | STMicroelectronics |
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