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LBZT52B7V5T1G PDF даташит
Спецификация LBZT52B7V5T1G изготовлена «Leshan Radio Company» и имеет функцию, называемую «Surface Mount Zener Diodes». |
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Детали детали
Номер произв | LBZT52B7V5T1G |
Описание | Surface Mount Zener Diodes |
Производители | Leshan Radio Company |
логотип | ![]() |
3 Pages
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LESHAN RADIO COMPANY, LTD.
Surface Mount Zener Diodes
Features:
*500mw Power Dissipation
*Ideal for Surface Mountted Application
*Zener Breakdown Voltage Range 2.0V to 36V
*Pb-Free package is available
LBZT52B2V0T1G
Series
1
2
Mechanical Data:
*Case : SOD-123 Molded plastic
*Terminals: Solderable per MIL-STD-202, Method 208
*Polarity: Cathode Indicated by Polarity Band
*Marking: Marking Code (See Specific marking table)
*Weigh: 0.01grams(approx)
SOD-123
Equivalent Circuit Diagram
1
Cathode
2
Anode
Maximum Ratings and Electrical Characteristics (TA=25 C Unless Otherwise Noted)
Characteristics
Symbol
Value
Unit
Total Power Dissipation on FR-5 Board(1)
PD 500 mW
Thermal Resistance Junction to Ambient Air (1)
R JA
305
C/W
Forward Voltage @ IF=10mA
VF 0.9
V
Junction and Storage Temperature Range
Tj,TSTG
-55 to +150
C
NOTES: 1. Device mounted on ceramic PCB; 7.6mm 9.4mm 0.87mm with pad areas 25mm2
Device Marking Code
Ratings and Characteristic curves
Device
LBZT52B2V0T1G
LBZT52B2V2T1G
LBZT52B2V4T1G
LBZT52B2V7T1G
LBZT52B3V0T1G
LBZT52B3V3T1G
LBZT52B3V6T1G
LBZT52B3V9T1G
LBZT52B4V3T1G
LBZT52B4V7T1G
LBZT52B5V1T1G
LBZT52B5V6T1G
LBZT52B6V2T1G
LBZT52B6V8T1G
LBZT52B7V5T1G
LBZT52B8V2T1G
Marking
02
12
22
32
42
52
62
72
82
92
A2
C2
E2
F2
H2
J2
Device
Marking
LBZT52B9V1T1G
LBZT52B10T1G
LBZT52B11T1G
L2
05
15
LBZT52B12T1G
LBZT52B13T1G
25
35
LBZT52B15T1G 45
LBZT52B16T1G 55
LBZT52B18T1G 65
LBZT52B20T1G
LBZT52B22T1G
LBZT52B24T1G
75
85
95
LBZT52B27T1G
LBZT52B30T1G
LBZT52B33T1G
LBZT52B36T1G
-
A5
C5
E5
F5
-
0.6
0.5
0.4
0.3
0.2
0.1
0
0 25 50 75 100 125 150
TA,AMBIENT TEMPERATURE(OC)
FIG. 1 Power Disspation vs Ambient temperaute
Rev.O 1/3
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LESHAN RADIO COMPANY, LTD.
LBZT52B2V0T1G Series
Electrical Characteristics ( TA=25 C unless otherwise noted, VF =0.9V Max@ IF =10mA)
Device
LBZT52B2V0T1G
LBZT52B2V2T1G
LBZT52B2V4T1G
LBZT52B2V7T1G
LBZT52B3V0T1G
LBZT52B3V3T1G
LBZT52B3V6T1G
LBZT52B3V9T1G
LBZT52B4V3T1G
LBZT52B4V7T1G
LBZT52B5V1T1G
LBZT52B5V6T1G
LBZT52B6V2T1G
LBZT52B6V8T1G
LBZT52B7V5T1G
LBZT52B8V2T1G
LBZT52B9V1T1G
LBZT52B10T1G
LBZT52B11T1G
LBZT52B12T1G
LBZT52B13T1G
LBZT52B15T1G
LBZT52B16T1G
LBZT52B18T1G
LBZT52B20T1G
LBZT52B22T1G
LBZT52B24T1G
LBZT52B27T1G
LBZT52B30T1G
LBZT52B33T1G
LBZT52B36T1G
Zener voltage
VZ(V)
Min. Max.
2.020
2.220
2.430
2.690
3.010
3.320
3.600
3.890
4.170
4.550
4.980
5.490
6.060
6.650
7.280
8.020
8.850
9.770
10.760
11.740
12.910
14.340
15.850
17.560
19.520
21.540
23.720
26.190
29.190
32.150
35.070
2.200
2.410
2.630
2.910
3.220
3.530
3.845
4.160
4.430
4.750
5.200
5.730
6.330
6.930
7.600
8.360
9.230
10.210
11.220
12.240
13.490
14.980
16.510
18.350
20.390
22.470
24.780
27.530
30.690
33.790
36.870
IZ
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Operating
resistance
ZZ(Ω)
Max.
IZ
(mA)
100 5
100 5
100 5
110 5
120 5
120 5
100 5
100 5
100 5
100 5
80 5
60 5
60 5
40 5
30 5
30 5
30 5
30 5
30 5
30 5
37 5
42 5
50 5
65 5
85 5
100 5
120 5
150 5
200 5
250 5
300 5
Rising operating
resistance
Zzk(Ω)
Max.
IZ
(mA)
1000
0.5
1000
0.5
1000
0.5
1000
0.5
1000
0.5
1000
1000
0.5
1.0
1000
1.0
1000
1.0
800 0.5
500 0.5
200 0.5
100 0.5
60 0.5
60 0.5
60 0.5
60 0.5
60 0.5
60 0.5
80 0.5
80 0.5
80 0.5
80 0.5
80 0.5
100 0.5
100 0.5
120 0.5
150 0.5
200 0.5
250 0.5
300 0.5
Reverse curre
IR(µA)
Max.
VR
(V)
120 0.5
120 0.7
100 1.0
100 1.0
50 1.0
20 1.0
10 1.0
5 1.0
5 1.0
2 1.0
2 1.5
1 2.5
1 3.0
0.5 3.5
0.5 4.0
0.5 5.0
0.5 6.0
0.1 7.0
0.1 8.0
0.1 9.0
0.1 10.0
0.1 11.0
0.1 12.0
0.1 13.0
0.1 15.0
0.1 17.0
0.1 19.0
0.1 21.0
0.1 23.0
0.1 25.0
0.1 27.0
Notes) 1. The Zener voltage (Vz) is measured 40ms after power is supplied.
2. The operating resistances (Zz, Zzk) are measured by superimposing a minute alternating current on the regulated current (Iz).
Rev.O 2/3
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LESHAN RADIO COMPANY, LTD.
LBZT52B2V0T1G Series
SOD−123
D
HE ÂÂÂÂÂÂÂÂÂ1 ÂÂÂ E
2
b
A
A1
L
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 0.94 1.17 1.35
A1 0.00 0.05 0.10
b 0.51 0.61 0.71
c −−− −−− 0.15
D 1.40 1.60 1.80
E 2.54 2.69 2.84
HE 3.56 3.68 3.86
L 0.25 −−− −−−
STYLE 1:
PIN 1. CATHODE
2. ANODE
MIN
0.037
0.000
0.020
−−−
0.055
0.100
0.140
0.010
INCHES
NOM
0.046
0.002
0.024
−−−
0.063
0.106
0.145
−−−
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
−−−
SOLDERING FOOTPRINT*
0.91
0.036
ÉÉÉÉÉÉÉÉÉ 2.36 ÉÉÉÉÉÉÉÉÉ
0.093
4.19
0.165
1.22
0.048
ǒ ǓSCALE 10:1
mm
inches
Rev.O 3/3
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