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PDF FDN537N Data sheet ( Hoja de datos )

Número de pieza FDN537N
Descripción Single N-Channel Power Trench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDN537N Hoja de datos, Descripción, Manual

FDN537N
Single N-Channel Power Trench® MOSFET
30 V, 6.5 A, 23 mΩ
January 2013
Features
General Description
„ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
„ Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Fast switching speed
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Application
„ Primary DC-DC Switch
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
-Continuous
TA = 25 °C
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±20
8.0
6.5
25
1.5
0.6
-55 to +150
Units
V
V
A
W
°C
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
80
180
°C/W
Device Marking
537
Device
FDN537N
Package
SSOT-3
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDN537N Rev.C2
1
www.fairchildsemi.com

1 page




FDN537N pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
0.005
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 180 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2013 Fairchild Semiconductor Corporation
FDN537N Rev.C2
5
www.fairchildsemi.com

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