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PDF 06N02C Data sheet ( Hoja de datos )
| Número de pieza | 06N02C | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | FNK | |
| Logotipo |  |
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FNK06N02C N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The FNK06N02Cuses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V.
ID = 50A
RDS(ON)< 7.5mΩ @ VGS=4.5V
DS(ON)<10.0mΩ @ VGS=2.5V
● High Power and current handing capability
● Lead free product is acquired
Schematic diagram
Application
●Battery Switch
●Load switch
●Power management
Package Marking And Ordering Information
Device Marking
Device
Device Package
06N02C
FNK06N02C
TO-251
Reel Size
Tape width
Quantity
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC =25
Continuous Drain Current (TJ =150℃)
TC =70℃
TA =25℃
ID
TA =70℃
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
20
±12
50
20
20
15
80
50
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
www.FNK-TECH.com
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 06N02C.PDF ] | |
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