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MDD5N40 PDF даташит

Спецификация MDD5N40 изготовлена ​​​​«MagnaChip» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв MDD5N40
Описание N-Channel MOSFET
Производители MagnaChip
логотип MagnaChip логотип 

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MDD5N40 Даташит, Описание, Даташиты
MDI5N40/MDD5N40
N-Channel MOSFET 400V, 3.4 A, 1.6
General Description
The MDI5N40 / MDD5N40 use advanced
Magnachips MOSFET Technology, which provides
low on-state resistance, high switching performance
and excellent quality.
MDI5N40 is suitable device for SMPS, HID and
general purpose applications.
Features
VDS = 400V
ID = 3.4A
RDS(ON) ≤ 1.6
Applications
Power Supply
PFC
Ballast
@VGS = 10V
@VGS = 10V
D
I-PAK
G D S (TO-251)
G
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Repetitive Pulse Avalanche Energy(4)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
Dv/dt
EAR
EAS
TJ, Tstg
Rating
400
±30
3.4
2.15
13.6
45
0.36
4.5
4.5
170
-55~150
Unit
V
V
A
A
A
W
W/ oC
V/ns
mJ
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Dec. 2011. Version 1.5
1
Symbol
RθJA
RθJC
Rating
110
2.75
Unit
oC/W
MagnaChip Semiconductor Ltd.









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MDD5N40 Даташит, Описание, Даташиты
Ordering Information
Part Number
MDI5N40TH
MDD5N40RH
Temp. Range
-55~150oC
-55~150oC
Package
I-Pak
D-Pak
Packing
Tube
Reel
RoHS Status
Halogen Free
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
gfs
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
Diode Forward Current
IS
Source-Drain Diode Forward
Voltage
VSD
Body Diode Reverse Recovery
Time
trr
Body Diode Reverse Recovery
Charge
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 400V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 1.7A
VDS = 30V, ID = 1.7A
VDS = 320V, ID = 3.4A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 200V, ID = 3.4A,
RG = 25Ω(3)
IS = 3.4A, VGS = 0V
IF = 3.4A, dl/dt = 100A/µs(3)
Note :
1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD 3.4A, di/dt200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=26.0mH, IAS=3.4A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Min
400
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
1.2
2.0
9
2.5
4
290
3
46
12
25
20
30
3.4
200
1.0
Max Unit
-
V
5.0
1 µA
100 nA
1.6 Ω
-S
nC
pF
ns
-A
1.4 V
ns
µC
Dec. 2011. Version 1.5
2 MagnaChip Semiconductor Ltd.









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MDD5N40 Даташит, Описание, Даташиты
10
9
Vgs=5.5V
=6.0V
=6.5V
8 =7.0V
=8.0V
7 =10.0V
=15.0V
6
Notes
1. 250PulseTest
2. TC=25
5
4
3
2
1
5 10 15
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
20
3.0
Notes :
2.5
1. VGS = 10 V
2. ID = 1.7 A
2.0
1.5
1.0
0.5
0.0
-50
0 50 100 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
200
10
* Notes ;
1. VDS=30V
150
25
1
46
VGS [V]
Fig.5 Transfer Characteristics
8
Dec. 2011. Version 1.5
3
3.4
3.2
3.0
2.8
2.6
2.4
2.2
VGS=10.0V
2.0
1.8 VGS=20V
1.6
1.4
1.2
1.0
05
ID,DrainCurrent [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
10
1.2
Notes :
1. V = 0 V
GS
2. ID = 250
1.1
1.0
0.9
0.8
-50
0 50 100 150
TJ, Junction Temperature [oC]
200
Fig.4 Breakdown Voltage Variation vs.
Temperature
Notes :
10 1. VGS = 0 V
2. 250us pulse
1 150
25
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.










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