2DD2661 PDF даташит
Спецификация 2DD2661 изготовлена «Diodes» и имеет функцию, называемую «NPN SURFACE MOUNT TRANSISTOR». |
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Детали детали
Номер произв | 2DD2661 |
Описание | NPN SURFACE MOUNT TRANSISTOR |
Производители | Diodes |
логотип |
4 Pages
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2DD2661
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Complementary PNP Type Available (2DB1697)
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
COLLECTOR
2,4
3E
Top View
1
BASE
3
EMITTER
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
C4 2 C
1B
TOP VIEW
Pin Out Configuration
Value
15
12
6
4
2
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.9
139
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
Min
15
12
6
⎯
⎯
⎯
270
Output Capacitance
Cobo
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
26
Max
⎯
⎯
⎯
0.1
0.1
180
680
⎯
Unit
V
V
V
μA
μA
mV
⎯
pF
Current Gain-Bandwidth Product
fT
⎯ 170 ⎯
MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Conditions
IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0
VCB = 15V, IE = 0
VEB = 6V, IC = 0
IC = 1A, IB = 50mA
VCE = 2V, IC = 200mA
VCB = 10V, IE = 0,
f = 1MHz
VCE = 2V, IC = 100mA,
f = 100MHz
2DD2661
Document number: DS31635 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
No Preview Available ! |
2DD2661
2.0 2.5
1.6
1.2
0.8
0.4
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1,000
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
100
2.0 IB = 5mA
1.5 IB = 4mA
IB = 3mA
1.0
IB = 2mA
0.5
IB = 1mA
0
0 4 8 12 16 20
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
IC/IB = 20
0.1
0.01
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
VCE = 2V
10
1 10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
VCE = 2V
1.0
0.001
1 10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
IC/IB = 20
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
0.2 TA = 150°C
0
1
10
100
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.8
TA = -55°C
0.6 TA = 25°C
TA = 85°C
0.4
TA = 150°C
0.2
1
10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DD2661
Document number: DS31635 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
No Preview Available ! |
1,000
2DD2661
1,000
100
f = 1MHz
Cibo
100
10
Cobo
10
0.1 1
10 100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
VCE = 2V
f = 100MHz
1
0 10 20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
Ordering Information (Note 6)
Notes:
Part Number
2DD2661-13
Case
SOT89-3L
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Packaging
2500/Tape & Reel
Marking Information
YWW
2661
2661 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
Package Outline Dimensions
D1 R0.200
E
B1
8° (4X)
B
e
D
L
A
C
H
SOT89-3L
Dim Min Max Typ
A 1.40 1.60 1.50
B 0.45 0.55 0.50
B1 0.37 0.47 0.42
C 0.35 0.43 0.38
D 4.40 4.60 4.50
D1 1.50 1.70 1.60
E 2.40 2.60 2.50
e — — 1.50
H 3.95 4.25 4.10
L 0.90 1.20 1.05
All Dimensions in mm
2DD2661
Document number: DS31635 Rev. 2 - 2
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated
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