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2DD2661 PDF даташит

Спецификация 2DD2661 изготовлена ​​​​«Diodes» и имеет функцию, называемую «NPN SURFACE MOUNT TRANSISTOR».

Детали детали

Номер произв 2DD2661
Описание NPN SURFACE MOUNT TRANSISTOR
Производители Diodes
логотип Diodes логотип 

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2DD2661 Даташит, Описание, Даташиты
2DD2661
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Complementary PNP Type Available (2DB1697)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
COLLECTOR
2,4
3E
Top View
1
BASE
3
EMITTER
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
C4 2 C
1B
TOP VIEW
Pin Out Configuration
Value
15
12
6
4
2
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.9
139
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
Min
15
12
6
270
Output Capacitance
Cobo
Typ
26
Max
0.1
0.1
180
680
Unit
V
V
V
μA
μA
mV
pF
Current Gain-Bandwidth Product
fT
170
MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
Conditions
IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0
VCB = 15V, IE = 0
VEB = 6V, IC = 0
IC = 1A, IB = 50mA
VCE = 2V, IC = 200mA
VCB = 10V, IE = 0,
f = 1MHz
VCE = 2V, IC = 100mA,
f = 100MHz
2DD2661
Document number: DS31635 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated









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2DD2661 Даташит, Описание, Даташиты
2DD2661
2.0 2.5
1.6
1.2
0.8
0.4
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1,000
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
100
2.0 IB = 5mA
1.5 IB = 4mA
IB = 3mA
1.0
IB = 2mA
0.5
IB = 1mA
0
0 4 8 12 16 20
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
IC/IB = 20
0.1
0.01
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
VCE = 2V
10
1 10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
VCE = 2V
1.0
0.001
1 10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
IC/IB = 20
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
0.2 TA = 150°C
0
1
10
100
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.8
TA = -55°C
0.6 TA = 25°C
TA = 85°C
0.4
TA = 150°C
0.2
1
10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DD2661
Document number: DS31635 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated









No Preview Available !

2DD2661 Даташит, Описание, Даташиты
1,000
2DD2661
1,000
100
f = 1MHz
Cibo
100
10
Cobo
10
0.1 1
10 100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
VCE = 2V
f = 100MHz
1
0 10 20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
Ordering Information (Note 6)
Notes:
Part Number
2DD2661-13
Case
SOT89-3L
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Packaging
2500/Tape & Reel
Marking Information
YWW
2661
2661 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
Package Outline Dimensions
D1 R0.200
E
B1
8° (4X)
B
e
D
L
A
C
H
SOT89-3L
Dim Min Max Typ
A 1.40 1.60 1.50
B 0.45 0.55 0.50
B1 0.37 0.47 0.42
C 0.35 0.43 0.38
D 4.40 4.60 4.50
D1 1.50 1.70 1.60
E 2.40 2.60 2.50
e — — 1.50
H 3.95 4.25 4.10
L 0.90 1.20 1.05
All Dimensions in mm
2DD2661
Document number: DS31635 Rev. 2 - 2
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated










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