DataSheet26.com

2DD2652 PDF даташит

Спецификация 2DD2652 изготовлена ​​​​«Diodes» и имеет функцию, называемую «NPN SURFACE MOUNT TRANSISTOR».

Детали детали

Номер произв 2DD2652
Описание NPN SURFACE MOUNT TRANSISTOR
Производители Diodes
логотип Diodes логотип 

4 Pages
scroll

No Preview Available !

2DD2652 Даташит, Описание, Даташиты
Features
Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage
Ideal for Low Power Amplification and Switching
Complementary PNP Type Available (2DB1689)
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green Device" (Note 2)
2DD2652
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
C
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
BE
Device Schematic
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
15
12
6
1.5
3
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
300
417
500
250
-55 to +150
Unit
mW
°C/W
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
Min
15
12
6
270
Output Capacitance
Cobo
Typ
80
11
Max
0.1
0.1
200
680
Unit
V
V
V
μA
μA
mV
pF
Current Gain-Bandwidth Product
fT
260
MHz
Notes:
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
Conditions
IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0
VCB = 15V, IE = 0
VEB = 6V, IC = 0
IC = 500mA, IB = 25mA
VCE = 2V, IC = 200mA
VCB = 10V, IE = 0,
f = 1MHz
VCE = 2V, IC = 100mA,
f = 100MHz
2DD2652
Document number: DS31633 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated









No Preview Available !

2DD2652 Даташит, Описание, Даташиты
0.6
0.5
0.4
0.3 (Note 4)
0.2 (Note 3)
0.1
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1,000
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
100
2DD2652
1.8
1.6
1.4 IB = 5mA
1.2 IB = 4mA
1.0 IB = 3mA
0.8
IB = 2mA
0.6
0.4
IB = 1mA
0.2
0
0 0.5 1 1.5 2 2.5
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
3
1
IC/IB = 20
0.1
0.01
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
VCE = 2V
10
0.1 1
10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
VCE = 2V
1.0
0.001
0.1 1
10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
IC/IB = 20
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4
TA = 85°C
0.2
TA = 150°C
0
0.1 1
10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.8
TA = -55°C
0.6 TA = 25°C
TA = 85°C
0.4
TA = 150°C
0.2
0
1 10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DD2652
Document number: DS31633 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated









No Preview Available !

2DD2652 Даташит, Описание, Даташиты
1,000
100
10
f = 1MHz
Cibo
Cobo
2DD2652
1
0.1 1
10 100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
Ordering Information (Note 6)
Notes:
Part Number
2DD2652-7
Case
SOT-323
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Packaging
3000/Tape & Reel
Marking Information
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb Mar
23
RN2
RN2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
2010
X
Apr
4
2011
Y
May
5
Jun
6
2012
Z
2013
A
Jul Aug Sep
78 9
2014
B
2015
C
Oct Nov Dec
OND
Package Outline Dimensions
A
BC
G
H
K
J
D
L
M
SOT-323
Dim Min Max Typ
A 0.25 0.40 0.30
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D-
- 0.65
G 1.20 1.40 1.30
H 1.80 2.20 2.15
J 0.0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.18 0.11
α 0° 8° -
All Dimensions in mm
2DD2652
Document number: DS31633 Rev. 2 - 2
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated










Скачать PDF:

[ 2DD2652.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
2DD2652NPN SURFACE MOUNT TRANSISTORDiodes
Diodes
2DD2656NPN SURFACE MOUNT TRANSISTORDiodes
Diodes

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск