2DB1184Q PDF даташит
Спецификация 2DB1184Q изготовлена «Diodes» и имеет функцию, называемую «50V PNP MEDIUM POWER TRANSISTOR». |
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Детали детали
Номер произв | 2DB1184Q |
Описание | 50V PNP MEDIUM POWER TRANSISTOR |
Производители | Diodes |
логотип |
6 Pages
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Features
• BVCEO > -50V
• IC = -3A High Continuous Collector Current
• ICM = -4.5A Peak Pulse Current
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Voltage
• Ideal for Medium Power Switching or Amplification Applications
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
2DB1184Q
50V PNP MEDIUM POWER TRANSISTOR IN TO252
Mechanical Data
• Case: TO252 (DPAK)
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-
STD-202, Method 208 e3
• Weight: 0.34 grams (approximate)
TO252 (DPAK)
Top View
C
C
BB
EE
Device Schematic
Pin Out Configuration
Top view
Ordering Information (Note 4)
Product
2DB1184Q-13
Compliance
AEC-Q101
Marking
2DB1184Q
Reel Size (inches)
13
Tape Width (mm)
16
Quantity per Reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
2DB1184Q
2DB1184Q = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 14 = 2014)
WW = Week Code 01-52
2DB1184Q
Document number: DS31504 Rev. 5 - 2
1 of 6
www.diodes.com
May 2014
© Diodes Incorporated
No Preview Available ! |
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
-60
-50
-5
-3
-4.5
2DB1184Q
Unit
V
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Power Dissipation @TL = +25°C
Thermal Resistance, Junction to Lead
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Symbol
PD
PD
RθJA
RθJL
TJ, TSTG
Value
1.2
15
104
8.3
-55 to +150
Unit
W
W
°C/W
°C/W
°C
ESD Ratings (Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4000
400
Unit JEDEC Class
V 3A
VC
Note:
5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided
1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
0.001
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 110°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
0.01
0.1
1
10 100 1,000 10,000
t1, PULSE DURATION TIME (s)
Figure 1 Transient Thermal Response
2DB1184Q
Document number: DS31504 Rev. 5 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated
No Preview Available ! |
2DB1184Q
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 8)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol Min
BVCBO
BVCEO
BVEBO
ICBO
IEBO
-60
-50
-5
—
—
VCE(sat)
VBE(sat)
hFE
—
—
120
Typ
—
—
—
—
—
—
—
—
Current Gain-Bandwidth Product
fT — 110
Output Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Cobo
ton
td
tr
toff
ts
tf
—
—
—
—
—
—
—
Note:
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
26
109
60
49
280
246
34
Max
—
—
—
-1
-1
-1
-1.2
270
—
—
—
—
—
—
—
—
Unit Test Condition
V IC = -50µA, IE = 0
V IC = -1mA, IB = 0
V IE = -50µA, IC = 0
µA VCB = -40V, IE = 0
µA VEB = - 4V, IC = 0
V IC = -2A, IB = -0.2A
V IC = -1.5A, IB = -0.15A
— VCE = -3V, IC = -0.5A
MHz
pF
ns
ns
ns
ns
ns
ns
VCE = -5V, IC = -0.1A,
f = 30MHz
VCB = -10V, f = 1MHz
VCC = 30V
ICC = 150mA
IB1 = - IB2 = 15mA
1,000
800
IB = -5mA
600
IB = -4mA
400
200
IB = -3mA
IB = -2mA
IB = -1mA
0
0.1 1 10
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 2 Typical Collector Current vs. Collector-Emitter Voltage
400
350
VCE = -3V
300
250
200
150
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
100
50
TA = -55°C
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Figure 3 Typical DC Current Gain vs. Collector Current
2DB1184Q
Document number: DS31504 Rev. 5 - 2
3 of 6
www.diodes.com
May 2014
© Diodes Incorporated
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