TS4148 PDF даташит
Спецификация TS4148 изготовлена «Taiwan Semiconductor» и имеет функцию, называемую «0.35 / 0.5AMPS High Speed Switching Diode». |
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Детали детали
Номер произв | TS4148 |
Описание | 0.35 / 0.5AMPS High Speed Switching Diode |
Производители | Taiwan Semiconductor |
логотип |
2 Pages
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TS4148
0.35 / 0.5AMPS High Speed Switching Diode
Voltage Range
100 Volts
Current
0.35 / 0.5 Ampere
Features
For surface mounted application
Low forward voltage drop
High Current capability
Fast switching for high efficiency
High surge current capability
Chip version in 1206 and 0805, 0603
High temperature soldering:
260oC / 10 seconds at terminals
Mechanical Data
Cases: 1206, 0805 or 0603
Terminals: Tin plated
Polarity: indicated by cathode arrow
Packaging: 8 mm tape per EIA STD RS-481
Item
L
W
T
C
1206
0.135(3.40)
0.119(3.0)
0.07(1.70)
0.054(1.30)
0.038(0.95)
0.03(0.75)
0.03(0.75)
0.014(0.35)
0805
0.088(2.20)
0.072(1.8)
0.058(1.45)
0.042(1.05)
0.038(0.95)
0.03(0.75)
0.026(0.65)
0.01(0.25)
0603
0.071(1.65)
0.59(1.45)
0.039(0.9)
0.027(0.7)
0.034(0.75)
0.026(0.55)
0.018(0.45)
0.010(0.25)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
0603
Maximum Repetitive Peak Reverse Voltage
VRRM
Reverse Voltage
VR
Maximum Average Forward Rectified Current
Resistive Load f>50Hz
IF(AV)
Peak Forward Surge Current
Half Sine-wave
8.3 ms
1 uS
IFSM
350
1206
100
75
150
0805
500
2.0
Maximum Instantaneous Forward Voltage @100mA
Maximum D.C. Reverse Current @ Tc=25℃ VR=20V
at Rated DC Blocking Voltage @ Tc=125℃ VR=20V
VF
IR
1.0
25
50
Typical Reverse Recovery Time(Note 2) TJ=25℃
Trr
5.0
Typical Junction Capacitance (Note 1)
Cj 1.55 1.65
Typical Thermal Resistance
Power Dissipation
Operating Junction Temperature Range
RθJA
RθJC
PD
TJ
200 190
105 80
350 500
-65 to + 200
Storage Temperature Range
TSTG
-65 to + 200
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Recover to 0.25A.
1.60
150
60
Units
V
V
mA
mA
A
V
nA
uA
nS
pF
℃/W
mW
℃
℃
Rev. 4 July 2004
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RATINGS AND CHARACTERISTIC CURVES (TS4148)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
DUT
1W OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE
250
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.3- TYPICAL REVERSE CHARACTERISTICS
100
200
150
100
10
TL=1500C
50
0
0 100 200
CASE TEMPERATURE. (oC)
FIG.4- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
2.5
Tj=250C
2.0
8.3ms Single Half Sine Wave
JEDEC Method
1.5
300
1.0
0.5
1
0.10
TL=250C
0.010
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL FORWARD CHARACTERISTICS
300
12
5 10
20
NUMBER OF CYCLES AT 60Hz
50
FIG.5- TYPICAL JUNCTION CAPACITANCE
Tj=250C
1.7
1206
1.6 0805
1.5 0603
12
5 10 20 50 100 200 500
REVERSE VOLTAGE. (V)
200
100
1206
0603
0805
10
1
.4 .6 .8
Tj=25oC
Pulse Width=300 s
1% Duty Cycle
1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE. (V)
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Номер в каталоге | Описание | Производители |
TS4148 | 0.35 / 0.5AMPS High Speed Switching Diode | Taiwan Semiconductor |
TS4148C | 200mW High Speed SMD Switching Diode | Taiwan Semiconductor |
TS4148RW | 350mW High Speed SMD Switching Diode | Taiwan Semiconductor |
TS4148RWG | 350 mW High Speed SMD Switching Diode | Taiwan Semiconductor |
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