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AUIRF3415 PDF даташит

Спецификация AUIRF3415 изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв AUIRF3415
Описание Power MOSFET ( Transistor )
Производители International Rectifier
логотип International Rectifier логотип 

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AUIRF3415 Даташит, Описание, Даташиты
AUTOMOTIVE GRADE
PD - 97625
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
G
AUIRF3415
HEXFET® Power MOSFET
D V(BR)DSS
150V
RDS(on) max. 0.042
S ID
43A
D
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
G
Gate
DS
G
TO-220AB
AUIRF3415
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
cIDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
gRθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
43
30
150
200
1.3
± 20
590
22
20
5.0
-55 to + 175
300
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/19/2011









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AUIRF3415 Даташит, Описание, Даташиты
AUIRF3415
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA
fRDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.042 VGS = 10V, ID = 22A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
19 ––– ––– S VDS = 50V, ID = 22A
IDSS
Drain-to-Source Leakage Current
––– ––– 25 µA VDS = 150V, VGS = 0V
––– ––– 250
VDS = 120V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– ––– 200
ID = 22A
Qgs Gate-to-Source Charge
––– ––– 17 nC VDS = 120V
fQgd
Gate-to-Drain ("Miller") Charge
––– ––– 98
VGS = 10V, See Fig. 6 & 13
td(on)
Turn-On Delay Time
––– 12 –––
VDD = 75V
tr Rise Time
––– 55 –––
ID = 22A
td(off)
Turn-Off Delay Time
––– 71 ––– ns RG = 2.5
tf Fall Time
––– 69 –––
RD = 3.3 Ω, See Fig. 10
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
––– 2400 –––
––– 640 –––
––– 340 –––
and center of die contact
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 43
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 150
A showing the
integral reverse
G
––– ––– 1.3
fp-n junction diode.
S
V TJ = 25°C, IS = 22A, VGS = 0V
f––– 260 390 ns TJ = 25°C, IF = 22A
––– 2.2 3.3 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 2.4mH
RG = 25, IAS = 22A. (See Figure 12)
2
ƒ ISD 22A, di/dt 820A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… Rθ is measured at TJ approximately 90°C.
www.irf.com









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AUIRF3415 Даташит, Описание, Даташиты
AUIRF3415
Qualification Information
Qualification Level
Automotive
(per AEC-Q101) ††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device
Model
RoHS Compliant
TO-220
N/A
Class M4 (+/- 800V)†††
AEC-Q101-002
Class H2 (+/- 3500V)†††
AEC-Q101-001
Class C5 (+/- 2000V)†††
AEC-Q101-005
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage.
www.irf.com
3










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Номер в каталогеОписаниеПроизводители
AUIRF3415Power MOSFET ( Transistor )International Rectifier
International Rectifier

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