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GVA-123 PDF даташит

Спецификация GVA-123 изготовлена ​​​​«Mini-Circuits» и имеет функцию, называемую «Monolithic Amplifier».

Детали детали

Номер произв GVA-123
Описание Monolithic Amplifier
Производители Mini-Circuits
логотип Mini-Circuits логотип 

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GVA-123 Даташит, Описание, Даташиты
FMlatoGanin,oUlltirat-hWiidcebaAnd mplifier
500.01 to 12 GHz
The Big Deal
• Ultra broadband performance
• Excellent Gain Flatness
• Broadband without external matching components
GVA-123+
SOT-89 PACKAGE
Product Overview
GVA-123+ (RoHS compliant) is an advanced ultra-wideband amplifier fabricated using GaAs HBT technol-
ogy and offers excellent gain flatness over a broad frequency range. In addition, the GVA-123+ has good
input and output return loss over this frequency range without the need for external matching components.
Lead finish is tin-silver over nickel. It has repeatable performance from lot to lot and is enclosed in a SOT-89
package for very good thermal performance.
Key Features
Feature
Ultra Broad Band: 0.01 to 12 GHz
Ultra Flat Gain
±0.7 dB typ: 0.05 - 8 GHz
No External Matching Components
Required
Excellent ESD
HBM: class 1C (1000 to <2000V)
MM: class M2 (100 to <200V)
Advantages
Broadband covering primary wireless communications bands:
Cellular, PCS, LTE, WiMAX in a single amplifier.
Ultra Flat Gain, eliminates need for compensation networks to achieve published results
GVA-123+ provides good Input and Output Return Loss of 12-28 dB over 0.05 - 6 GHz with-
out the need for any external matching components
Simplifies ESD handling.
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected]
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GVA-123 Даташит, Описание, Даташиты
FMlatoGanin,oUlltirat-hWiidcebaAnd mplifier
Product Features
• Excellent Gain Flatness, ±0.7 dB, 0.05-8 GHz
• Gain, 16.9 dB typ. at 2 GHz
• Excellent return loss, 20 dB typ., 2 GHz
Typical Applications
• Base station infrastructure
• Test instruments
• MMDS & Wireless LAN
• LTE
• Satellite communication
• Avionics
0.01-12 GHz
CASE STYLE: DF782
PRICE: $5.95 ea. QTY. (10)
GVA-123+
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
General Description
GVA-123+ (RoHS compliant) is an advanced ultra wideband amplifier fabricated using GaAs HBT
technology and offers a broad frequency range. In addition, the GVA-123+ has good input and output
return loss over this frequency range without the need for external matching components. Lead finish is
tin-silver over nickel. It has repeatable performance from lot to lot and is enclosed in a SOT-89 package
for very good thermal performance.
simplified schematic and pin description
RF-IN
GND
RF-OUT
and DC-IN
4
3 RF-OUT & DC-IN
2 GROUND
1 RF-IN
Function
RF IN
RF-OUT and DC-IN
GND
Pin Number
1
3
2,4
Description
RF input pin. This pin requires the use of an external DC blocking capacitor chosen for
the frequency of operation.
RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking
capacitor is necessary for proper operation. An RF choke is needed to feed DC bias
without loss of RF signal due to the bias connection, as shown in “Recommended Ap-
plication Circuit”, Fig. 2
Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design”
to reduce ground path inductance for best performance.
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected]
REV. A
M148071
GVA-123+
TH/RS/CP
150320
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GVA-123 Даташит, Описание, Даташиты
Monolithic InGap HBT MMIC Amplifier
Electrical Specifications at 25°C and Vcc=5V, R= 16.5Ω unless noted
Parameter
Frequency Range
Gain
Gain Flatness
Input Return Loss
Output Return Loss
Condition (GHz)
0.05
0.85
2.0
6.0
8.0
10.0
12.0
0.05-8
0.05
0.85
2.0
6.0
8.0
10.0
12.0
0.05
Min.
0.01
­—
15.2
16.0
Typ.
16.2
17.2
16.9
16.4
16.3
12.5
7.1
±0.7
12.7
24.9
23.8
22.2
9.2
7.5
6.3
14.4
0.85
2.0
6.0
8.0
10.0
12.0
Reverse Isolation
6.0
Output Power at 1dB Compression
0.05
0.85
2.0
6.0
8.0
10.0
12.0
Output IP3
0.2
0.85
2.0
6.0
8.0
10.0
12.0
Noise Figure
0.2
0.85
2.0
6.0
8.0
12.0
Supply Operating Voltage (Vcc)
4.8
Device Operating Current
Device Current Variation vs. Temperature2
Device Current Variation vs. Voltage
Thermal Resistance, junction-to-ground lead
(1) Measured on Mini-Circuits Characterization test board TB-665+. See Characterization Test Circuit (Fig. 1)
(2) (Current at 85°C —­ Current at -45°C)/130
31.0
23.5
15.5
9.0
7.4
6.0
20.7
15.9
16.3
16.2
13.4
10.3
7.4
5.1
30.2
31.1
29.9
24.5
21.8
19.1
14.9
3.8
3.9
4.0
4.4
4.9
6.9
5.0
52
56
0.020
156
GVA-123+
Max.
12.0
18.6
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dB
5.2 V
57 mA
µA/°C
mA/mW
°C/W
Absolute Maximum Ratings(3)
Parameter
Ratings
Operating Temperature (ground lead)
Storage Temperature
Operating Current at 5V (Vcc) & 16.5resistor
Power Dissipation
Input Power (CW)
DC Voltage on Pin 3
-40°C to 85°C
-65°C to 150°C
100 mA
0.34 W
28 dBm (5 min max.)
11 dBm (continuous)
6V
(3) Permanent damage may occur if any of these limits are exceeded.
Electrical maximum ratings are not intended for continuous normal operation.
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected]
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Номер в каталогеОписаниеПроизводители
GVA-123Monolithic AmplifierMini-Circuits
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GVA-123+Monolithic AmplifierMini-Circuits
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