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PDF AOV11S60 Data sheet ( Hoja de datos )
| Número de pieza | AOV11S60 | |
| Descripción | Power Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOV11S60
600V 8A α MOS TM Power Transistor
General Description
Product Summary
The AOV11S60 has been fabricated using the advanced
αMOSTM high voltage process that is designed to deliver
high levels of performance and robustness in switching
applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
700V
45A
0.5Ω
11nC
2.7µJ
Top View
DFN8X8
Bottom View
D
G
Pin1:G
AOV11S60
S
S
Pin2: Driver Source
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B Derate above 25oC
VGS
ID
IDM
IDSM
IAR
EAR
EAS
PD
TA=25°C
Power Dissipation A TA=70°C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
PDSM
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t ≤ 10s
Steady-State
Symbol
RθJA
Maximum Junction-to-Case
Steady-State
RθJC
Maximum
600
±30
8
7.0
45
0.65
0.22
2
60
120
156
1.25
8.3
5.3
100
20
-55 to 150
300
Typ
12
40
0.6
G
Max
15
50
0.8
D
S
Units
V
V
A
A
A
mJ
mJ
W
W/ oC
W
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev.1.0: September 2013
www.aosmd.com
Page 1 of 7
1 page  
AOV11S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 2000
8 1600
TJ(Max)=150°C
TC=25°C
6 1200
4 800
2 400
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
0
1E-05 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=0.8°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.000001
Single Pulse
PD
Ton
T
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
1
10
Rev.1.0: September 2013
www.aosmd.com
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOV11S60.PDF ] | |
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