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Спецификация BC548B изготовлена «Micro Commercial Components» и имеет функцию, называемую «NPN Silicon Amplifier Transistor 625mW». |
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Детали детали
Номер произв | BC548B |
Описание | NPN Silicon Amplifier Transistor 625mW |
Производители | Micro Commercial Components |
логотип |
4 Pages
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MCC
omponents
21201 Itasca Street Chatsworth
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Features
l Through Hole Package
l 150oC Junction Temperature
Pin Configuration
Bottom View
CB E
Mechanical Data
l Case: TO-92, Molded Plastic
l Polarity: indicated as above.
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
BC546
BC547 VCEO
BC548
BC546
BC547 VCBO
BC548
Value
65
45
30
80
50
30
Unit
V
V
Emitter-Base Voltage
Collector Current(DC)
Power Dissipation@TA=25oC
Power Dissipation@TC=25oC
Thermal Resistance, Junction to
Ambient Air
VEBO
IC
Pd
Pd
RqJA
6.0 V
100 mA
625 mW
5.0 mW/oC
1.5 W
12 mW/oC
200 oC/W
Thermal Resistance, Junction to
Case
RqJC 83.3 oC/W
Operating & Storage Temperature Tj, TSTG -55~150 oC
BC546,B
BC547,A,B,C
BC548,A,B,C
NPN Silicon
Amplifier Transistor
625mW
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM MIN
MAX
A .175 .185
B .175 .185
C .500
---
D .016 .020
E .135 .145
G .095 .105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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BC546 thru BC548C
MCC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
BC546
BC547
BC548
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = 100 µAdc)
BC546
BC547
BC548
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = 10 mA, IC = 0)
BC546
BC547
BC548
V(BR)EBO
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
hFE
(IC = 2.0 mA, VCE = 5.0 V)
BC546
BC547
BC548
BC547A/548A
BC546B/547B/548B
BC547C/BC548C
(IC = 100 mA, VCE = 5.0 V)
Collector–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW,
f = 1.0 kHz, ∆f = 200 Hz)
BC547A/548A
BC546B/547B/548B
BC548C
BC546
BC547
BC548
BC546
BC547/548
BC547A/548A
BC546B/547B/548B
BC547C/548C
BC546
BC547
BC548
VCE(sat)
VBE(sat)
VBE(on)
fT
Cobo
Cibo
hfe
NF
Min
65
45
30
80
50
30
6.0
6.0
6.0
—
—
—
110
110
110
110
200
420
—
—
—
—
—
0.55
—
150
150
150
—
—
125
125
125
240
450
—
—
—
Typ
—
—
—
—
—
—
—
—
—
90
150
270
—
—
—
180
290
520
120
180
300
---
—
—
—
300
300
300
1.7
10
—
—
220
330
600
2.0
2.0
2.0
Max
—
—
—
—
—
—
—
—
—
—
—
—
450
800
800
220
450
800
—
—
—
0.3
1.0
0.7
0.77
—
—
—
4.5
—
500
900
260
500
900
10
10
10
Unit
V
V
V
—
V
V
V
MHz
pF
pF
—
dB
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BC546 thru BC548C
2.0
1.5
VCE = 10 V
TA = 25°C
1.0
0.8
0.6
0.4
0.3
0.2
0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
IC = 100 mA
10 mA 20 mA
0.8
0.4
0
0.02
0.1 1.0
IB, BASE CURRENT (mA)
10 20
Figure 3. Collector Saturation Region
MCC
1.0
0.9 TA = 25°C
0.8
0.7
0.6
0.5
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
0.4
0.3
0.2
0.1 VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2 1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. Base–Emitter Temperature Coefficient
BC547/BC548
10
7.0 TA = 25°C
5.0 Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
20
40
400
300
200
100
80
VCE = 10 V
TA = 25°C
60
40
30
20
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 6. Current–Gain – Bandwidth Product
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