TLP293 PDF даташит
Спецификация TLP293 изготовлена «Toshiba» и имеет функцию, называемую «PHOTOCOUPLER InGaAs IRED & PHOTO-TRANSISTOR». |
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Детали детали
Номер произв | TLP293 |
Описание | PHOTOCOUPLER InGaAs IRED & PHOTO-TRANSISTOR |
Производители | Toshiba |
логотип |
10 Pages
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TOSHIBA PHOTOCOUPLER InGaAs IRED & PHOTO-TRANSISTOR
TLP293
TLP293
Power Supplies
Programmable Controllers
Hybrid ICs
Unit: mm
TLP293 consists of a low input type photo transistor optically coupled to an
InGaAs infrared emitting diode.
TLP293 is housed in the SO4 package, very small and thin coupler.
Since TLP293 is guaranteed wide operating temperature (Ta=-55 to 125 ˚C)
and high isolation voltage (3750 Vrms), it’s suitable for high-density surface
mounting applications such as small switching power supplies and
programmable controllers.
Collector-Emitter Voltage : 80 V (min)
Current Transfer Ratio
Rank GB
: 50% (min)
: 100% (min)
Isolation Voltage
: 3750 Vrms (min)
Operation temperature
: -55 to 125 ˚C
UL recognized
: UL1577, File No. E67349
cUL approved
: CSA Component Acceptance Service No.5A,
File No. E67349
Option (V4)
VDE approved
: DIN EN 60747-5-5 approved No. 40009347
(Note) When an EN 60747-5-5 approved type is needed,
please designate the “Option (V4)”
JEDEC
-
JIETA
-
TOSHIBA
11-3C1
Weight: 0.05 g (typ.)
Pin Configuration
TLP293
14
23
Construction Mechanical Rating
Creepage distance: 5.0mm (min)
Clearance: 5.0mm (min)
Insultion thickness: 0.4mm (min)
1:ANODE
2:CATHODE
3:EMITTER
4:COLLECTOR
Start of commercial production
2013-09
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TLP293
Current Transfer Ratio (CTR) Rank (Unless otherwise specified, Ta = 25°C)
Rank
(Note1)
Test Condition
Current Transfer Ratio
IC / IF
Min Max
Marking Of Classification
Unit
Blank
Y
GR
GB
BL
YH
IF = 5 mA, VCE = 5 V
IF = 0.5 mA, VCE = 5 V
IF = 5 mA, VCE = 5 V
IF = 0.5 mA, VCE = 5 V
IF = 5 mA, VCE = 5 V
IF = 0.5 mA, VCE = 5 V
IF = 5 mA, VCE = 5 V
IF = 0.5 mA, VCE = 5 V
IF = 5 mA, VCE = 5 V
IF = 0.5 mA, VCE = 5 V
IF = 0.5 mA, VCE = 5 V
50
50
100
100
200
75
600 Blank, YE, GR, GB, BL, Y+,
G, G+, B
150 YE
300 GR
600 GB
600 BL
150 Y+
%
GRL
IF = 0.5 mA, VCE = 5 V
100
200 G
GRH
IF = 0.5 mA, VCE = 5 V
150
300 G+
BLL IF = 0.5 mA, VCE = 5 V
200
400 B
Note1: Specify both the part number and a rank in this format when ordering
(e.g.) rank GB: TLP293 (GB,E
For safety standard certification, however, specify the part number alone.
(e.g.)TLP293 (GB,E: TLP293
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TLP293
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
SYMBOL
NOTE
RATING
UNIT
Input forward current
IF 50 mA
Input forward current derating (Ta≥90°C)
∆IF /ΔTa
-1.5 mA /°C
Input forward current (pulsed )
IFP (Note 2) 1 A
Input reverse voltage
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
VR
Tj
VCEO
VECO
5V
125 °C
80 V
7V
Collector current
IC 50 mA
Collector power dissipation
Collector power dissipation derating(Ta≥25°C)
PC
∆PC /ΔTa
150 mW
-1.5 mW /°C
Junction temperature
Tj 125 °C
Operating temperature range
Storage temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation derating(Ta≥25°C)
Topr
Tstg
Tsol
PT
∆PT /ΔTa
-55 to 125
-55 to 125
260 (10s)
200
-2.0
°C
°C
°C
mW
mW /°C
Isolation voltage
BVS
(Note3)
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2: Pulse width ≤ 100μs, frequency 100Hz
Note3: AC, 1 minute, R.H.≤60%, Device considered a two terminal device: LED side pins shorted together and
DETECTOR side pins shorted together.
Electrical Characteristics (Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Input forward voltage
Input reverse current
Input capacitance
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Dark current
Collector-emitter capacitance
SYMBOL
TEST CONDITION
VF IF = 10 mA
IR VR = 5 V
CT V = 0 V, f = 1 MHz
V(BR) CEO
V(BR) ECO
IDARK
CCE
IC = 0.5 mA
IE = 0.1 mA
VCE = 48 V
VCE = 48 V, Ta = 85°C
V = 0 V, f = 1 MHz
MIN TYP. MAX UNIT
1.1 1.25 1.4
- -5
V
μA
- 30 - pF
80 - - V
7- -V
- 0.01 0.08 μA
- 2 50 μA
- 10 - pF
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Номер в каталоге | Описание | Производители |
TLP290 | GaAs Ired & Photo-Transistor | Toshiba |
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TLP291 | PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR | Toshiba |
TLP291-4 | Photocouplers GaAs Infrared LED & Photo Transistor | Toshiba |
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