DataSheet26.com

RB168L-40 PDF даташит

Спецификация RB168L-40 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв RB168L-40
Описание Schottky Barrier Diode
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

6 Pages
scroll

No Preview Available !

RB168L-40 Даташит, Описание, Даташиты
Schottky Barrier Diode
RB168L-40
lApplication
General rectification
lDimensions (Unit : mm)
2.6±0.15
Data Sheet
lLand Size Figure (Unit : mm)
2.0
lFeatures
1) Small power mold type
(PMDS)
2) High reliability
3) Super low IR
lConstruction
Silicon epitaxial planar type
12
0.1±0.02
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
1 2 : Manufacture Date
lTaping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
PMDS
lStructure
φf11..555±00..0055
Cathode
Anode
0.3
2.9±0.1
4.0±0.1
φf11..555
2.8MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
40 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, Tc=125ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at Ta=25ºC
Operating junction temperature
Tj
-
40
1
30
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
VF IF=1.0A - - 0.65 V
IR
VR=40V
- - 0.55 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A









No Preview Available !

RB168L-40 Даташит, Описание, Даташиты
RB168L-40
lElectrical Characteristic Curves
Data Sheet
10
Tj = 150°C
Tj = 125°C
1
Tj = 75°C
0.1
Tj = 25°C
0.01
Tj = -25°C
0.001
0 100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1000
100
Tj = 150°C
10
Tj = 125°C
1
0.1 Tj = 75°C
0.01
0.001
Tj = 25°C
Tj = -25°C
0.0001
0
10 20 30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
40
1000
Tj = 25°C
f = 1MHz
640
630
620
Tj=25°C
IF=1.0A
n=30pcs
610
100 600
Ave. : 576.8mV
590
580
570
10
0
5 10 15 20 25 30
560
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2015.01 - Rev.A









No Preview Available !

RB168L-40 Даташит, Описание, Даташиты
RB168L-40
lElectrical Characteristic Curves
Data Sheet
200
180
Tj=25°C
VR=40V
160 n=30pcs
140
120
100 Ave. : 43.5nA
80
60
40
20
0
IR DISPERSION MAP
381
361 Tj=25°C
f=1MHz
341 VR=0V
n=10pcs
321
301
281 Ave. : 242pF
261
241
221
201
Ct DISPERSION MAP
400
350
300
250
IFSM 1cyc
8.3ms
Ta=25°C
200
Ave. : 118A
150
100
50
0
IFSM DISPERSION MAP
40
Tj=25°C
35 IF=0.5A
IR=1.0A
30 Irr / IR=0.25
n=10pcs
25
20
15 Ave. : 7.9ns
10
5
0
trr DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2015.01 - Rev.A










Скачать PDF:

[ RB168L-40.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
RB168L-40Schottky Barrier DiodeROHM Semiconductor
ROHM Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск