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RB088NS100 PDF даташит

Спецификация RB088NS100 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв RB088NS100
Описание Schottky Barrier Diode
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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RB088NS100 Даташит, Описание, Даташиты
Schottky Barrier Diode
RB088NS100
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common type
2) High reliability
3) Super low IR
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
(2)
RB088
NS100
1
(1) (3)
lLand Size Figure (Unit : mm)
11
9.9
2.5
2.54
LPDS
2.54
ROHM : LPDS
JEITA : TO263S
1 : Manufacture Date
lStructure
(2) Cathode
lTaping Dimensions (Unit : mm)
(1) Anode
(3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
110 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, IO/2 per diode, Tc=137ºC Max.
60Hz half sin wave, Non-repetitive at
Ta=25ºC, 1cycle, per diode
Operating junction temperature
Tj
-
100
10
100
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
VF IF=5A - - 0.87 V
IR
VR=100V
- - 5 mA
Thermal resistance
Rth(j-c)
Junction to case
- - 2 °C / W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A









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RB088NS100 Даташит, Описание, Даташиты
RB088NS100
lElectrical Characteristic Curves
Data Sheet
100
Tj = 150°C
10 Tj = 125°C
1
Tj = 75°C
0.1 Tj = 25°C
0.01
Tj = -25°C
0.001
0 200 400 600 800 1000 1200 1400
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
1000
100
Tj = 150°C
10
1
0.1
0.01
0.001
0
Tj = 125°C
Tj = 75°C
Tj = 25°C
Tj = -25°C
20 40 60 80 100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
Tj = 25°C
f = 1MHz
760
755
750
Tj=25°C
IF=5A
n=30pcs
745
100 740
Ave. : 731.5mV
735
730
725
10
0
720
10 20 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2015.01 - Rev.A









No Preview Available !

RB088NS100 Даташит, Описание, Даташиты
RB088NS100
lElectrical Characteristic Curves
Data Sheet
500
Tj=25°C
450 VR=100V
400 n=30pcs
350
300
250 Ave. : 151nA
200
150
100
50
IR DISPERSION MAP
680
Tj=25°C
f=1MHz
670 VR=0V
n=10pcs
660
Ave. : 650pF
650
640
Ct DISPERSION MAP
500
450
400
350
IFSM 1cyc
8.3ms
Ta=25°C
300
Ave. : 231A
250
200
150
100
50
IFSM DISPERSION MAP
40
Tj=25°C
35 IF=0.5A
IR=1.0A
30 Irr / IR=0.25
n=10pcs
25
20
Ave. : 11.8ns
15
10
5
0
trr DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2015.01 - Rev.A










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ROHM Semiconductor

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