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PDF 74CBTLV3125 Data sheet ( Hoja de datos )

Número de pieza 74CBTLV3125
Descripción 4-bit bus switch
Fabricantes NXP Semiconductors 
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74CBTLV3125
4-bit bus switch
Rev. 3 — 15 December 2011
Product data sheet
1. General description
The 74CBTLV3125 provides a 4-bit high-speed bus switch with separate output enable
inputs (1OE to 4OE). The low on-state resistance of the switch allows connections to be
made with minimal propagation delay. The switch is disabled (high-impedance OFF-state)
when the output enable (nOE) input is HIGH.
To ensure the high-impedance OFF-state during power-up or power-down, nOE should be
tied to the VCC through a pull-up resistor. The minimum value of the resistor is determined
by the current-sinking capability of the driver.
Schmitt trigger action at control input makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 2.3 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
2. Features and benefits
Supply voltage range from 2.3 V to 3.6 V
Standard ’125’-type pinout
High noise immunity
Complies with JEDEC standard:
JESD8-5 (2.3 V to 2.7 V)
JESD8-B/JESD36 (2.7 V to 3.6 V)
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
CDM AEC-Q100-011 revision B exceeds 1000 V
5 switch connection between two ports
Rail to rail switching on data I/O ports
CMOS low power consumption
Latch-up performance exceeds 250 mA per JESD78B Class I level A
IOFF circuitry provides partial Power-down mode operation
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C

1 page




74CBTLV3125 pdf
NXP Semiconductors
74CBTLV3125
4-bit bus switch
Table 6. Static characteristics …continued
At recommended operating conditions voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Tamb = 40 C to +85 C
Min Typ[1] Max
IS(ON)
ON-state
VCC = 3.6 V; see Figure 7
leakage current
- - 1
IOFF power-off
VI or VO = 0 V to 3.6 V;
leakage current VCC = 0 V
- - 10
ICC
ICC
CI
supply current
VI = GND or VCC; IO = 0 A;
VSW = GND or VCC;
VCC = 3.6 V
-
additional
pin nOE; VI = VCC 0.6 V; [2] -
supply current VSW = GND or VCC;
VCC = 3.6 V
input
capacitance
pin nOE; VCC = 3.3 V;
VI = 0 V to 3.3 V
-
- 10
- 300
0.9 -
CS(OFF) OFF-state
capacitance
VCC = 3.3 V; VI = 0 V to 3.3 V
- 5.2 -
CS(ON) ON-state
capacitance
VCC = 3.3 V; VI = 0 V to 3.3 V
- 14.3 -
Tamb = 40 C to +125 C Unit
Min Max
- 20 A
- 50 A
- 50 A
- 2000 A
- - pF
- - pF
- - pF
[1] All typical values are measured at Tamb = 25 C.
[2] One input at 3 V, other inputs at VCC or GND.
9.1 Test circuits
VIH
A
IS
VI
VCC
nOE
nB
nA
GND
IS
A
VO
VIL
A
IS
VI
VCC
nOE
nA
nB
GND
VO
001aak864
Fig 6.
VI = VCC or GND and VO = GND or VCC.
Test circuit for measuring OFF-state leakage
current (one switch)
001aak865
Fig 7.
VI = VCC or GND and VO = open circuit.
Test circuit for measuring ON-state leakage
current (one switch)
74CBTLV3125
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 15 December 2011
© NXP B.V. 2011. All rights reserved.
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74CBTLV3125 arduino
NXP Semiconductors
12. Package outline
74CBTLV3125
4-bit bus switch
SSOP16: plastic shrink small outline package; 16 leads; body width 3.9 mm; lead pitch 0.635 mm SOT519-1
D
y
Z
16
c
9
EA
X
HE v M A
1
e
A2
A1
8
wM
bp
A
(A3)
Lp
L
detail X
θ
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1) E (1)
e
HE
mm
1.73
0.25
0.10
1.55
1.40
0.25
0.31
0.20
0.25
0.18
5.0
4.8
4.0
3.8
0.635
6.2
5.8
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
OUTLINE
VERSION
SOT519-1
IEC
REFERENCES
JEDEC
JEITA
L Lp v w y Z (1) θ
1
0.89
0.41
0.2
0.18
0.09
0.18
0.05
8o
0o
EUROPEAN
PROJECTION
ISSUE DATE
99-05-04
03-02-18
Fig 18. Package outline SOT519-1 (SSOP16)
74CBTLV3125
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 15 December 2011
© NXP B.V. 2011. All rights reserved.
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