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B1397 PDF даташит

Спецификация B1397 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «PNP Transistor - 2SB1397».

Детали детали

Номер произв B1397
Описание PNP Transistor - 2SB1397
Производители Sanyo
логотип Sanyo логотип 

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B1397 Даташит, Описание, Даташиты
Ordering number:EN3176A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1397/2SD2100
Compact Motor Driver Applications
Features
· Low saturation voltage.
· Contains diode between collector and emitter.
· Contains bias resistance between base and emitter.
· Large current capacity.
· Small-sized package making it easy to provide high-
density, small-sized hybrid ICs.
Package Dimensions
unit:mm
2038
[2SB1397/2SD2100]
( ) : 2SB1397
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Mounted on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
hFE1
hFE2
fT
VCB=(–)20V, IE=0
VCE=(–)2V, IC=(–)0.5A
VCE=(–)2V, IC=(–)2A
VCE=(–)2V, IC=(–)0.5A
Output Capacitance
Marking : 2SB1397 : BP
2SD2100 : DP
Cob VCB=(–)10V, f=1MHz
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
Ratings
(–)25
(–)20
(–)6
(–)2
(–)4
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
(–)70
(–)50
(300)
200
(40)25
max
(–)1.0
Unit
µA
MHz
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1598HA (KT)/12894TH/7149MO, TS No.3176–1/5









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B1397 Даташит, Описание, Даташиты
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Diode Forwad Voltage
Base-to-Emitter Resistance
Electrical Connection
2SB1397/2SD2100
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO1
V(BR)CEO2
VF
RBE
IC=(–)1A, IB=(–)50mA
IC=(–)1A, IB=(–)50mA
IC=(–)10µA, IE=0
IC=(–)10µA, RBE=
IC=(–)10mA, RBE=
IF=0.5A
Ratings
min typ
(–)0.25
(–)25
(–)25
(–)20
1.6
max
(–)0.5
(–)1.5
(–)1.5
Unit
V
V
V
V
V
kV
No.3176–2/5









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B1397 Даташит, Описание, Даташиты
2SB1397/2SD2100
No.3176–3/5










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