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JCS2N65C PDF даташит

Спецификация JCS2N65C изготовлена ​​​​«JILIN SINO-MICROELECTRONICS» и имеет функцию, называемую «N-CHANNEL MOSFET».

Детали детали

Номер произв JCS2N65C
Описание N-CHANNEL MOSFET
Производители JILIN SINO-MICROELECTRONICS
логотип JILIN SINO-MICROELECTRONICS логотип 

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JCS2N65C Даташит, Описание, Даташиты
N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS2N65C
主要参数 MAIN CHARACTERISTICS
ID 2.0 A
VDSS 650 V
RdsonVgs=10V5.0 Ω
Qg 8.0 nC
封装 Package
用途
高频开关电源
电子镇流器
LED 电源
APPLICATIONS
High efficiency switch
mode power supplies
Electronic lamp ballasts
based on half bridge
LED power supplies
产品特性
低栅极电荷
Crss (典型值 3.8pF)
开关速度快
产品全部经过雪崩测试
高抗 dv/dt 能力
RoHS 产品
FEATURES
Low gate charge
Low Crss (typical 3.8pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
JCS2N65TC-O-T-N-B
JCS2N65VC-O-V-N-B
JCS2N65RC-O-R-N-B
JCS2N65CC-O-C-N-B
JCS2N65FC-O-F-N-B
JCS2N65FC-O-F2-N-
B
JCS2N65T
JCS2N65V
JCS2N65R
JCS2N65C
JCS2N65F
JCS2N65F
封装
Package
TO-92
IPAK
DPAK
TO-220C
TO-220MF
TO-220MF
-K2
无卤素
Halogen Free Packaging
NO
NO
NO
NO
NO
NO
编带 Brede
条管 Tube
条管 Tube
条管 Tube
条管 Tube
条管 Tube
器件重量
Device
Weight
0.22 g(typ)
0.35 g(typ)
0.30 g(typ)
2.15 g(typ)
2.20 g(typ)
2.20 g(typ)
版本:201412B
1/19









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JCS2N65C Даташит, Описание, Даташиты
R
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
JCS2N65C
项目
Parameter
符号
Symbol
JCS2N65
VC/RC
数 值 Value
JCS2N65 JCS2N65
CC FC
JCS2N65
TC
最高漏极-源极直流电
VDSS
650
Drain-Source Voltage
连续漏极电流
Drain
Current-continuous
ID
T=25
T=100
1.9
1.1
2.0
1.3
2.0*
1.3*
最大脉冲漏极电流(注 1
Drain Current pulse
IDM
note 1
6.0
6.0*
最高栅源电压
Gate-Source Voltage
VGSS
±30
单脉冲雪崩能量(注 2
Single Pulsed
Avalanche
EAS
110
Energynote 2
雪崩电流(注 1
Avalanche Currentnote IAR
1
1.9
重复雪崩能量(注 1
Repetitive Avalanche
Current note 1
EAR
4.2
二极管反向恢复最大电
压变化速率(注 3
Peak Diode Recovery
dv/dt
4.6
dv/dt note 3
最高结温及存储温度
Operating and Storage T TJ STGB B
-55+150
Temperature Range
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
版本:201412B
2/19









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JCS2N65C Даташит, Описание, Даташиты
R
电特性 ELECTRICAL CHARACTERISTICS
JCS2N65C
项目
符号
测试条件
最大 典型 最 大单 位
Parameter
关态特性 Off Characteristics
Symbol
Tests conditions
Min Typ Max Units
漏-源击穿电压
Drain-Source Voltage
BVDSS
I DB
=250μA,
B
VBGSB=0V
650 - - V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/ΔTJ
I DB
=1m
B
A,
25
referenced
to
- 0.6 - V/
零栅压下漏极漏电流
Zero Gate Voltage Drain Current IDSS
正向栅极体漏电流
VBDSB=650V,VBGSB=0V,
TBCB=25
VBDSB=520V, TBCB=125
- - 10 μA
- - 100 μA
Gate-body leakage current,
forward
IGSSF
VBDSB=0V, VGSB B =30V
- - 100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGSB B , ID=250μA
2.0 - 4.0 V
静态导通电阻
Static Drain-Source
On-Resistance
RDS(ON)
VGS =10V , ID=1A
- 4.0 5.0
正向跨导
Forward Transconductance
gfs
VDS = 40V , ID=1.0Anote 4- 2.45 - S
动态特性 Dynamic Characteristics
输入电容
Input capacitance
输出电容
Output capacitance
Ciss
Coss
VDS=25V,
VGS =0V,
f=1.0MHBZB
- 420 480 pF
- 14 18 pF
反向传输电容
Reverse transfer capacitance
Crss
- 3.8 4.1 pF
版本:201412B
3/19










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