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FDD4243_F085 PDF даташит

Спецификация FDD4243_F085 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «P-Channel PowerTrench MOSFET».

Детали детали

Номер произв FDD4243_F085
Описание P-Channel PowerTrench MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDD4243_F085 Даташит, Описание, Даташиты
FDD4243_F085
P-Channel PowerTrench® MOSFET
-40V, -14A, 64mΩ
Features
„ Typ rDS(on) = 36mΩ at VGS = -10V, ID = -6.7A
„ Typ rDS(on) = 48mΩ at VGS = -4.5V, ID = -5.5A
„ Typ Qg(TOT) = 21nC at VGS = -10V
„ High performance trench technology for extremely low
rDS(on)
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Inverter
„ Power Supplies
December 2010
©2010 Fairchild Semiconductor Corporation
FDD4243_F085 Rev. C
1
www.fairchildsemi.com









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FDD4243_F085 Даташит, Описание, Даташиты
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC< 130oC, VGS = 10V)
Pulsed
EAS Single Pulse Avalanche Energe
PD
Power Dissipation
Dreate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
(Note 1)
Ratings
-40
±20
-14
See Figure 4
84
50
0.34
-55 to +175
Units
V
V
A
mJ
W
W/oC
oC
RθJC
Maximum Thermal Resistance Junction to Case
3 oC/W
RθJA
Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
40
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDD4243
FDD4243_F085
Package
TO252
Reel Size
13”
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Tape Width
12mm
Quantity
2500 units
Min Typ Max Units
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = -250μA, VGS = 0V
ID = -250μA, referenced to 25°C
VDS = -32V
VGS = ±20V
TJ = 125oC
-40
-
-
-
-
- -V
-32 - mV/°C
-
-
-1
-100
μA
- ±100 nA
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on) Drain to Source On Resistance
gFS Forward Transconductance
Dynamic Characteristics
VGS = VDS, ID = -250μA
-1.4 -1.6 -3.0
V
ID = –250μA, referenced to 25°C - 4.7 - mV/°C
ID = -6.7A, VGS= -10V
ID = -5.5A, VGS= -4.5V
ID
TJ
=
=
-165.70AoC, VGS=
-10V,
ID = –6.7A, VDS = –5V,
- 36 44
- 48 64 mΩ
- 57 70
- 23 -
S
Ciss
Coss
Crss
RG
Qg(TOT)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = -20V, VGS = 0V,
f = 1MHz
f = 1MHz
VDD = -20V, VGS = -10V
ID = -6.7A
- 1165 1550 pF
-
165 220
pF
- 90 135 pF
- 4 -Ω
- 21 29 nC
- 3.4 - nC
- 4 - nC
FDD4243_F085 Rev. C
2
www.fairchildsemi.com









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FDD4243_F085 Даташит, Описание, Даташиты
Electrical Characteristics TJ = 25oC unless otherwise noted
Symbol
Parameter
Switching Characteristics
Test Conditions
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Diode Characteristics
VDD = -20V, ID = -6.7A
VGS = -10V, RGEN = 6Ω
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD = -6.7A, VGS=0V
ISD = -6.7A, dISD/dt = 100A/μs
Min Typ Max Units
- 6 12 ns
- 15 26 ns
- 22 35 ns
- 7 14 ns
- -0.86 -1.2 V
- 29 43 ns
- 30 44 nC
Notes:
1: Starting TJ= 25°C, L = 3mH, IAS= 7.5A, VGS= 10V, VDD= 40V during the inductor charging time and 0V during the time in avalanche.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDD4243_F085 Rev. C
3
www.fairchildsemi.com










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Номер в каталогеОписаниеПроизводители
FDD4243_F085P-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor

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