FDC642P_F085 PDF даташит
Спецификация FDC642P_F085 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «P-Channel PowerTrench MOSFET». |
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Детали детали
Номер произв | FDC642P_F085 |
Описание | P-Channel PowerTrench MOSFET |
Производители | Fairchild Semiconductor |
логотип |
7 Pages
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FDC642P_F085
P-Channel PowerTrench® MOSFET
-20V, -4A, 100mΩ
Features
Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A
Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A
Fast switching speed
Low gate charge(6.9nC typical)
High performance trench technology for extremely low
rDS(on)
SuperSOTTM-6 package:small footprint(72% smaller
than standard SO-8);low profile(1mm thick).
RoHS Compliant
Qualified to AEC Q101
Applications
Load switch
Battery protection
Power management
June 2009
S
D
D
SuperSOT TM-6
G
D
D
S4
D5
D6
3G
2D
1D
©2009 Fairchild Semiconductor Corporation
FDC642P_F085 Rev. A
1
www.fairchildsemi.com
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MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (VGS = 4.5V)
Pulsed
EAS Single Pulse Avalanche Energy
PD Power Dissipation
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient SSOT-6, 1in2 copper pad area
Ratings
-20
±8
-4
-20
72
1.2
-55 to +150
Units
V
V
A
mJ
W
oC
30 oC/W
103 oC/W
Package Marking and Ordering Information
Device Marking
Device
FDC642P
FDC642P_F085
Package
SSOT-6
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Characteristics
ID = -250µA, VGS = 0V
VDS = -16V,
VGS = ±8V,
VGS(th) Gate to Source Threshold Voltage
rDS(on) Drain to Source On Resistance
gFS Forward Transconductance
Dynamic Characteristics
VGS = VDS, ID = -250µA
ID = -4A, VGS = -4.5V
ID = -3.2A, VGS = -2.5V
ID = -4A, VGS = -4.5V,
TJ = 125oC
ID = -4A, VDD = -5V
Ciss
Coss
Crss
Rg
Qg(TOT)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at -4.5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = -10V, VGS = 0V,
f = 1MHz
f = 1MHz
VDD = -10V, ID = -4A
VGS = -4.5V
Min Typ Max Units
-20 -
-V
- - -1 µA
- - ±100 nA
-0.4 -0.7 -1.5
V
- 52.5 65
-
75.3 100
mΩ
- 72.7 105
- 10 -
S
- 630 - pF
- 160 - pF
- 65
- pF
- 4.4 - Ω
- 6.9 9.0 nC
- 1.2 - nC
- 1.8
- nC
FDC642P_F085 Rev. A
2
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Electrical Characteristics TA = 25oC unless otherwise noted
Symbol
Parameter
Switching Characteristics
Test Conditions
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = -10V, ID = -1A
VGS = -4.5V, RGEN = 6Ω
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
1: Starting TJ = 25oC, L = 14.1mH, IAS = -3.2A
ISD = -1.3A
IF = -1.3A, dSD/dt = 100A/µs
Min Typ Max Units
- - 23 ns
- 7.3 - ns
- 5.5 - ns
- 23.2 -
ns
- 9.6 - ns
- - 53 ns
-
-0.7 -1.2
V
- 17 22 ns
- 5.6 7.3 nC
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDC642P_F085 Rev. A
3
www.fairchildsemi.com
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Номер в каталоге | Описание | Производители |
FDC642P_F085 | P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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