FDS4141_F085 PDF даташит
Спецификация FDS4141_F085 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «P-Channel PowerTrench MOSFET». |
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Детали детали
Номер произв | FDS4141_F085 |
Описание | P-Channel PowerTrench MOSFET |
Производители | Fairchild Semiconductor |
логотип |
7 Pages
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FDS4141_F085
P-Channel PowerTrench® MOSFET
-40V, -10.8A, 19.0mΩ
May 2009
Features
Typ rDS(on) = 10.5mΩ at VGS = -10V, ID = -10.5A
Typ rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -8.4A
Typ Qg(TOT) = 35nC at VGS = -10V
High performance trench technology for extremely low
rDS(on)
RoHS Compliant
Qualified to AEC Q101
Applications
Control switch in synchronous & non-synchronous buck
Load switch
Inverter
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
©2009 Fairchild Semiconductor Corporation
FDS4141_F085 Rev. A
1
www.fairchildsemi.com
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MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (VGS = 10V)
Pulsed
EAS Single Pulse Avalanche Energy
PD Power Dissipation
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient SO-8, 1in2 copper pad area
Ratings
-40
±20
-10.8
-36
229
1.6
-55 to +150
Units
V
V
A
mJ
W
oC
30 oC/W
81 oC/W
Package Marking and Ordering Information
Device Marking
Device
FDS4141
FDS4141_F085
Package
SO-8
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max Units
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Characteristics
ID = -250µA, VGS = 0V
VDS = -32V,
VGS = ±20V,
-40 -
-V
- - -1 µA
- - ±100 nA
VGS(th) Gate to Source Threshold Voltage
rDS(on) Drain to Source On Resistance
gFS Forward Transconductance
Dynamic Characteristics
VGS = VDS, ID = -250µA
ID = -10.5A, VGS = -10V
ID = -8.4A, VGS = -4.5V
ID = -10.5A, VGS = -10V,
TJ = 125oC
ID = -10.5A, VDD = -5V
-1.0 -1.7 -3.0
V
- 10.5 13.0
-
14.8 19.0
mΩ
- 15.3 19.0
34 S
Ciss
Coss
Crss
Rg
Qg(TOT)
Qg(-5)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at -10V
Total Gate Charge at -5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = -20V, VGS = 0V,
f = 1MHz
- 2005 -
- 355 -
- 190 -
pF
pF
pF
f = 1MHz
- 5.0 - Ω
VGS = 0 to -10V
VGS = 0 to -5V
VDD = -20V
ID = -10.5A
-
-
-
35 45
18.6 24.2
5.2 -
nC
nC
nC
- 6.6
- nC
FDS4141_F085 Rev. A 2 www.fairchildsemi.com
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Electrical Characteristics TA = 25oC unless otherwise noted
Symbol
Parameter
Switching Characteristics
Test Conditions
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = -20V, ID = -10.5A
VGS = -10V, RGEN = 6Ω
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
1: Starting TJ = 25oC, L = 6.2mH, IAS = -8.6A
ISD = -10.5A
ISD = -2.1A
IF = -10.5A, dSD/dt = 100A/µs
Min Typ Max Units
- - 25 ns
- 9.7 - ns
- 4.4 - ns
- 41 - ns
- 11.6 -
ns
- - 84 ns
- -0.8 -1.3
V
- -0.7 -1.2
- 26 34 ns
- 13.4 17.4 nC
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDS4141_F085 Rev. A 3 www.fairchildsemi.com
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Номер в каталоге | Описание | Производители |
FDS4141_F085 | P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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