C4203 PDF даташит
Спецификация C4203 изготовлена «Toshiba» и имеет функцию, называемую «NPN Transistor - 2SC4203». |
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Детали детали
Номер произв | C4203 |
Описание | NPN Transistor - 2SC4203 |
Производители | Toshiba |
логотип |
5 Pages
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TOSHIBA Transistor Silicon Epitaxial Planar Type
2SC4203
Video Output for High Definition VDT
High Speed Switching Applications
2SC4203
Unit: mm
· High transition frequency: fT = 400 MHz (typ.)
(VCE = 10 V, IC = 70 mA)
· Low output capacitance: Cob < 5 pF (max) (VCB = 30 V)
· High voltage: VCEO = 150 V
· High power dissipation: PC = 10 W
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (pulse)
Base current
Power dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
180
150
5
0.3
0.5
0.2
1.0
10
150
−55 to 150
Unit
V
V
V
A
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7B2A
Weight: 0.36 g (typ.)
1 2002-07-23
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Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 150 V, IE = 0
VEB = 5 V, IC = 0
IC = 1 mA, IB = 0
VCE = 10 V, IC = 50 mA
VCE = 10 V, IC = 200 mA
IC = 200 mA, IB = 20 mA
IC = 200 mA, IB = 20 mA
VCE = 10 V, IC = 70 mA
VCB = 30 V, f = 1 MHz, IE = 0
Marking
2SC4203
Min Typ. Max Unit
― ― 10 µA
― ― 10 µA
150 ―
―
V
40 ― 240
20 ― ―
― ― 2.0 V
― ― 1.5 V
300 400 ― MHz
― 4.0 5.0 pF
C4203
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
2 2002-07-23
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240
200 1 0.9 0.8
160
120
80
40
IC – VCE
Common emitter
Tc = 25°C
0.7 0.6
0.5
0.4
0.3
0.2
IB = 0.1 mA
0
0 20 40 60 80 100 120 140
Collector-emitter voltage VCE (V)
2SC4203
500
Common emitter
Tc = 25°C
400
VBE – IC
300
Tc = 100°C
200
25
−25
100
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-emitter voltage VBE (V)
hFE – IC
300
Common emitter
Tc = 25°C
100 VCE = 20 V
5
50 10
30
0.1 0.3
1 3 10 30 100 300 1000
Collector current IC (mA)
hFE – IC
300
Common emitter
VCE = 10 V
Tc = 100°C
25
100
−25
50
30
0.1 0.3
1 3 10 30 100 300 1000
Collector current IC (mA)
VCE (sat) – IC
3
Common emitter
Tc = 25°C
1
0.5
0.3
0.1
0.05
IC/IB = 20
10
5
0.03
0.1 0.3
1
3
10 30 100 300 1000
Collector current IC (mA)
3
Common emitter
IC/IB = 10
1
VCE (sat) – IC
0.5
0.3
0.1
0.05
0.03
0.1 0.3
Tc = 100°C
25
−25
1 3 10 30 100 300 1000
Collector current IC (mA)
3 2002-07-23
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