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C4188 PDF даташит

Спецификация C4188 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «NPN Transistor - 2SC4188».

Детали детали

Номер произв C4188
Описание NPN Transistor - 2SC4188
Производители Sanyo
логотип Sanyo логотип 

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C4188 Даташит, Описание, Даташиты
Ordering number:ENN2557B
NPN Epitaxial Planar Silicon Transistor
2SC4188
Ultrahigh-Definition CRT Display
Video Output Applications
Features
· High breakdown voltage : VCEO200V.
· Small reverse transfer capacitance and excellent high
frequency characteristic : Cre=1.3pF typ.
· Adoption of FBET process.
Package Dimensions
unit:mm
2010C
[2SC4188]
10.2
3.6 5.1
4.5
1.3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collecor-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC Tc=25˚C
Junction Tempreature
Storage temperature
Tj
Tstg
The 2SC4188 is classified by 10mA hFE as follows :
Rank
C
D
E
F
hFE 40 to 80 60 to 120 100 to 200 160 to 320
1.2
0.8
123
2.55 2.55
Conditions
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO220AB
Ratings
200
200
5
100
200
1.5
10
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72204TN (PC)/82098HA (KT)/5118TA/4217TA, TS No.2557-1/4









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C4188 Даташит, Описание, Даташиты
2SC4188
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturatin Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
Cre
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=150V, IE=0
VEB=4V, IC=0
VCE=10V, IC=10mA
VCE=30V, IC=10mA
VCB=30V, f=1MHz
VCB=30V, f=1MHz
IC=20mA, IB=2mA
IC=20mA, IB=2mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
Ratings
min typ
40*
150
1.8
1.3
200
200
5
max
0.1
0.1
320*
0.6
1.0
Unit
µA
µA
MHz
pF
pF
V
V
V
V
V
IC -- VCE
20
160μA
18 140μA
16
120μA
14
12 100μA
10 80μA
10
80μA
9
8
7
6
5
IC -- VCE
70μA
60μA
50μA
40μA
8 60μA
6
40μA
4
20μA
2
0 IB=0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE – V ITR06468
IC -- VBE
120
VCE=10V
100
4 30μA
3 20μA
2
10μA
1
0 IB=0
0 10 20 30 40 50 60 70 80 90 100
Collector-to-Emitter Voltage, VCE – V ITR06469
5 hFE -- IC
VCE=10V
3
2 Ta=75°C
80 25°C
100
60
--25°C
7
5
40
3
20 2
0
0
1000
7
5
3
2
0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE – V ITR06470
f T -- IC
VCE=30V
100
7
5
3
2
10
5 7 1.0
2 3 5 7 10
2 3 5 7 100 2
Collector Current, IC –mA
ITR06472
10
5 7 1.0
2
2 3 5 7 10
23 5
Collector Current, IC – mA
Cob -- VCB
7 100 2
ITR06471
f=1MHz
10
7
5
3
2
1.0
7
5
5 7 1.0
2 3 5 7 10
2 3 5 7 100
2
Collector-to-Base Voltage, VCB -- V ITR06473
No.2557-2/4









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C4188 Даташит, Описание, Даташиты
2SC4188
Cre -- VCB
VCE(sat) -- IC
2 1.0
f=1MHz
IC / IB=10
7
10 5
7
3
5
2
3
2
0.1
1.0
7
5
5 7 1.0
2 3 5 7 10
2 3 5 7 100 2
Collector-to-Base Voltage, VCB -- V ITR06474
VBE(sat) -- IC
10
IC / IB=10
7
5
3
2
1.0
7
5
3
5 7 1.0
12
2 3 5 7 10
23
Collector Current, IC – mA
PC -- Ta
5 7 100
ITR06476
7
5
3
5 7 1.0
1000
7
5
2 3 5 7 10
23
Collector Current, IC – mA
ASO
5 7 100
ITR06475
3
ICP=200mA
2
1ms
IC=100mA
100
7
5
3
DC operation
2
10
Tc=25°C
7
5
Single pulse
Ta=25°C
3 5 7 10
23
5 7 100
23 5
Collector-to-Emitter Voltage, VCE – V ITR06477
10
8
6
4
2
1.5
No heat sink
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C ITR06478
No.2557-3/4










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