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2SC4162 PDF даташит

Спецификация 2SC4162 изготовлена ​​​​«INCHANGE» и имеет функцию, называемую «Silicon NPN Power Transistor».

Детали детали

Номер произв 2SC4162
Описание Silicon NPN Power Transistor
Производители INCHANGE
логотип INCHANGE логотип 

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2SC4162 Даташит, Описание, Даташиты
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4162
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 10 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
20 A
35 W
150
-55~150
isc Websitewww.iscsemi.cn









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2SC4162 Даташит, Описание, Даташиты
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4162
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE=
VCEX(SUS) Collector-Emitter Sustaining Voltage
IC= 4.5A; IB1= 0.45A, IB2= -1.8A,
L= 500μH, clamped
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.6A
ICBO Collector Cutoff Current
VCB= 400V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.6A; VCE= 5V
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
hFE-3
DC Current Gain
IC= 10mA; VCE= 5V
COB Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 1.6A; VCE= 10V
Switching Times
ton Turn-On Time
tstg Storage Time
tf Fall Time
IC= 7A; IB1= 1.4A; IB2= -2.8A;
VCC= 200V; RL= 28.6Ω
MIN TYP. MAX UNIT
500 V
400 V
400 V
7V
0.8 V
1.5 V
10 μA
10 μA
15 50
10
10
120 pF
20 MHz
0.5 μs
2.5 μs
0.3 μs
hFE-1 Classifications
L MN
15-30 20-40 30-50
isc Websitewww.iscsemi.cn
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