C4080 PDF даташит
Спецификация C4080 изготовлена «Sanyo» и имеет функцию, называемую «NPN Transistor - 2SC4080». |
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Детали детали
Номер произв | C4080 |
Описание | NPN Transistor - 2SC4080 |
Производители | Sanyo |
логотип |
2 Pages
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Ordering number:EN3171
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1575/2SC4080
High-Frequency Amplifier,
Wide-Band Amplifier Applications
Features
· High fT.
· High breakdown voltage.
· Small reverse transfer capacitance and excellent
high-frequency characteristic.
· Adoption of FBET process.
Package Dimensions
unit:mm
2038
[2SA1575/2SC4080]
E : Emitter
C : Collector
B : Base
( ) : 2SA1575
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
Mounted on ceramic board (250mm2×0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)150V, IE=0
VEB=(–)2V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)10V, IC=(–)60mA
VCE=(–)30V, IC=(–)30mA
VCB=(–)30V, f=1MHz
Reverse Transfer Capacitance
Cre VCB=(–)30V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)100µA, IC=0
* : The 2SA1575/2SC4080 are classified by 10mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
Marking 2SA1575 : AF
2SC4080 : CI
hFE rank : C, D, E, F
SANYO : PCP
(Bottom view)
Ratings
(–)200
(–)200
(–)4
(–)100
(–)200
500
1.3
150
–55 to +150
Unit
V
V
V
mA
mA
mW
W
˚C
˚C
Ratings
min typ
40*
20
400
1.8
(2.3)
1.4
(1.7)
(–)200
(–)200
(–)4
max
(–)0.1
(–)1.0
320*
(–)1.0
(–)1.0
Unit
µA
µA
MHz
pF
pF
pF
pF
V
V
V
V
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72098HA (KT)/7139MO, TS No.3171-1/2
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2SA1575/2SC4080
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of July, 1998. Specifications and information herein are subject to
change without notice.
PS No.3171-2/2
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