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C4003 PDF даташит

Спецификация C4003 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «NPN Transistor - 2SC4003».

Детали детали

Номер произв C4003
Описание NPN Transistor - 2SC4003
Производители Sanyo
логотип Sanyo логотип 

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C4003 Даташит, Описание, Даташиты
Ordering number : ENN2959B
2SC4003
2SC4003
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Features
High breakdown voltage.
Adoption of MBIT process.
Excellent hFE linearity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
VCB=300V, IE=0
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
DC Current Gain
hFE VCE=10V, IC=50mA
Gain-Bandwidth Product
fT VCE=30V, IC=10mA
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=50mA, IB=5mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=50mA, IB=5mA
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CBO IC=10µA, IE=0
V(BR)CEO IC=1mA, RBE=
Emitter-to-Base Breakdown Voltage
V(BR)EBO IE=10µA, IC=0
* : The 2SC4003 is classified by 50mA hFE as follows :
Rank
D
E
hFE 60 to 120 100 to 200
Ratings
400
400
5
200
400
1
10
150
--55 to +150
Unit
V
V
V
mA
mA
W
W
°C
°C
min
60*
400
400
5
Ratings
typ
max
Unit
0.1 µA
0.1 µA
200*
70 MHz
0.6 V
1.0 V
V
V
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32505TN (PC)/82903TN (KT)/D1598HA (KT)/8219MO/6139MO, TS No.2959-1/4









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C4003 Даташит, Описание, Даташиты
Continued from preceding page.
Parameter
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Time
Turn-OFF Time
Package Dimensions
unit : mm
2045B
2SC4003
Symbol
Cob
Cre
ton
toff
Conditions
VCB=30V, f=1MHz
VCB=30V, f=1MHz
See specified test circuit.
See specified test circuit.
Ratings
min typ max
4
3
0.25
5.0
Package Dimensions
unit : mm
2044B
Unit
pF
pF
µs
µs
6.5
5.0 2.3
4 0.5
6.5 2.3
5.0 0.5
4
0.85
0.7
0.6
12 3
2.3 2.3
1.2
0.5 1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0~0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
IB1
IB2
OUTPUT
VR
50
RB
+
100µF
RL
+
470µF
VCC=150V
VBE= --1V
10IB1= --10IB2=IC=50mA
RL=3k, RB=200at IC=50mA
IC -- VBE
120
VCE=10V
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE V ITR06242
hFE -- IC
5
3
Ta=70°C
2
25°C
100 --30°C
7
5
3
2
VCE=10V
10
7
5
7 1.0
2 3 5 7 10
2 3 5 7 100 2 3
Collector Current, IC mA
ITR06243
No.2959-2/4









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C4003 Даташит, Описание, Даташиты
2SC4003
VCE(sat) -- IC
2
IC / IB=10
1.0
7
5
3
2
0.1 Ta=70°C
7
25°C, --30°C
5
3
2
7 1.0
10
7
5
3
2
2 3 5 7 10
23
5 7 100
2
Collector Current, IC mA
ITR06244
SW Time -- IC
tstg
1.0
7
5
tf
3
2
Ta=25°C
0.1 VCC=150V
7
5
10IB1= --10IB2=IC
1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC mA
PC -- Ta
1.2
ton
23 5
ITR06246
VBE(sat) -- IC
10
IC / IB=10
7
5
3
2
1.0
Ta= --30°C
7
5
25°C
3
70°C
2
7 1.0
1000
2 3 5 7 10
2 3 5 7 100 2 3
Collector Current, IC mA
ITR06245
ASO
5 ICP=400mA
3 IC=200mA
2
100
5
3
2
10
5
100ms
DC operation(DTaC=o2p5e°raCti)on(Tc=25°C)
3
2
1.0
5 Tc=25°C
2 3 5 7 10
2 3 5 7 100
23 5
Collector-to-Emitter Voltage, VCE V ITR06247
PC -- Tc
12
1.0 10
0.8
0.6 No heat sink
0.4
8
6
4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C IT09519
2
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc – ˚C
IT09520
No.2959-3/4










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