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C3116 PDF даташит

Спецификация C3116 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «NPN Transistor - 2SC3116».

Детали детали

Номер произв C3116
Описание NPN Transistor - 2SC3116
Производители Sanyo
логотип Sanyo логотип 

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C3116 Даташит, Описание, Даташиты
Ordering number:ENN1032B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1248/2SC3116
160V/700mA Switching Applications
Uses
· Color TV sound output, converters, inverters.
Features
· High breakdown voltage.
· Large current capacity.
· Using MBIT process
Package Dimensions
unit:mm
2009B
[2SA1248/2SC3116]
8.0
4.0
2.7
1.6
0.8
0.8
0.6
3.0
0.5
( ) : 2SA1248
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pc
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)120V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE1
hFE2
VCE=(–)5V, IC=(–)100mA
VCE=(–)5V, IC=(–)10mA
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)50mA
* : 2SA1248/2SC3116 are classified by follows according to hFE at 100mA.
Rank
R
S
T
hFE 100 to 200 140 to 280 200 to 400
12 3
2.4
4.8
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Ratings
(–)180
(–)160
(–)6
(–)0.7
(–)1.5
1
10
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
(–)1.0 µA
(–)1.0 µA
100*
400*
90
120 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/5137KI/D222KI, TS No.1032-1/4









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C3116 Даташит, Описание, Даташиты
Continued from preceding page.
Parameter
Common Base Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SA1248/2SC3116
Symbol
Conditions
Cob VCB=(–)10V, f=1MHz
VCE(sat) IC=(–)250mA, IB=(–)25mA
VBE(sat)
V(BR)CEO
V(BR)CEO
V(BR)EBO
ton
IC=(–)250mA, IB=(–)25mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
See Specified Test Circuit
tstg See Specified Test Circuit
tf See Specified Test Circuit
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
INPUT
VR
50
RB
+
100µF
333
+
470µF
--5V 100V
20IB1=--20IB2=IC=300mA
(For PNP, the polarity is reversed.)
Ratings
min typ
8
(11)
0.12
(–0.2)
(–)0.85
(–)180
(–)160
(–)6
(60)50
(900)
1000
(60)60
max
0.4
(–0.5)
(–)1.2
Unit
pF
V
V
V
V
V
ns
ns
ns
--800
From top
--700 --200mA
--180mA
--600 --160mA
--140mA
--500
--400
--300
IC -- VCE
--120mA
--100mA
--80mA
--60mA
--40mA
2SA1248
Pulse
--20mA
--200
--100
00
--800
--700
--600
--500
--400
--300
--200
--100
00
IB=0
--200
--400
--600
--800
--1000
Collector-to-Emitter Voltage, VCE – mV ITR03053
IC -- VCE
----54..05mmAA
--4.0mA
--3.5mA
--3.0mA
--2.5mA
--2.0mA
--1.5mA
2SA1248
Pulse
--1.0mA
--0.5mA
IB=0
--10 --20 --30 --40 --50 --60 --70 --80
Collector-to-Emitter Voltage, VCE – V ITR03055
800
From top
700 100mA
90mA
600 80mA
70mA
500 60mA
400
300
200
IC -- VCE
50mA
40mA
30mA
20mA
10mA
2SC3116
Pulse
100
00
1000
800
600
400
200
0
0
IB=0
200 400 600 800 1000
Collector-to-Emitter Voltage, VCE – mV ITR03054
IC -- VCE
4.0mA3.5mA
2SC3116
Pulse
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
IB=0
10 20 30 40 50 60 70 80
Collector-to-Emitter Voltage, VCE – V ITR03056
No.1032-2/4









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C3116 Даташит, Описание, Даташиты
2SA1248/2SC3116
IC -- VBE
VCE(sat) -- IC
1000
10
VCE=5V
IC / IB=10
5
800 3
2
600
400
200
For PNP, minus sign is
omitted.
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR03057
hFE -- IC
1000
7 2SA1248
5 Pulse
3
2
1.0
5
3
2
2SA1248
0.1 2SC3116
5
3 For PNP, minus sign is omitted.
2
3 5 7 10
2 3 5 7 100 2 3
Collector Current, IC – mA
hFE -- IC
1000
7
5
5 7 1000 2
ITR03058
2SC3116
Pulse
3
2
100
7
5
3
2
10
7
5
3
3 5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 2
Collector Current, IC – mA
ITR03059
fT -- IC
5
2SA1248
3
2
VCE=5V
10V
100
7
5
100
7
5
3
2
10
7
5
3
3 5 7 10 2 3 5 7 100 2 3 5 7 1000 2
Collector Current, IC – mA
ITR03060
5 fT -- IC
2SC3116
3
2 VCE=10V
5V
100
7
5
33
22
10 5 7 --10
100
7
5
23
5 7 --100
23
Collector Current, IC – mA
Cob -- VCB
5 7 --1000
ITR03061
f=1MHz
3
2
10 2SA1248
7
5
2SC3116
3
2
For PNP, minus sign is omitted.
1.0
1.0
23
5 7 10
23
5 7 100
2
Collector-to-Base Voltage, VCB -- V ITR03063
10 5 7 10
3
2
23
5 7 100
23
Collector Current, IC – mA
ASO
5 7 1000
ITR03062
2SA1248 / 2SC3116
1.0
5
3
2
0.1
5
3
DC operDatCioonpTear=at2io5n°C
2
0.01
5
3 For PNP, minus sign is omitted.
2
1.0 2 3 5 7 10 2 3 5 7 100 2 3
Collector-to-Emitter Voltage, VCE – V ITR03064
No.1032-3/4










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