C3090 PDF даташит
Спецификация C3090 изготовлена «Sanyo» и имеет функцию, называемую «NPN Transistor - 2SC3090». |
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Детали детали
Номер произв | C3090 |
Описание | NPN Transistor - 2SC3090 |
Производители | Sanyo |
логотип |
4 Pages
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Ordering number:EN1013C
NPN Triple Diffused Planar Silicon Transistor
2SC3090
500V/10A Switching Regulator Applications
Features
· High breakdown voltage (VCBO≥800V).
· Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm
2022
[2SC3090]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
PW≤300µs, duty cycle≤10%
Tc=25˚C
Switching Time Test Circuit
E : Emitter
C : Collector
B : Base
SANYO : TO-3PB
Ratings
800
500
7
10
20
4
2.5
100
150
–55 to +150
Unit
V
V
V
A
A
W
W
W
˚C
˚C
Unit (resistance : Ω, capacitance : F)
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/D138MO/4207KI/2125MW, TS No.1013-1/4
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2SC3090
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min typ
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Collector-to-Emitter Sustain Voltage
Collector-to-Emitter Sustain Voltage
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEO(sus)
VCEX(sus)1
VCEX(sus)2
VCB=500V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1.2A
VCE=5V, IC=6A
IC=6A, IB=1.2A
IC=6A, IB=1.2A
VCE=10V, IC=1.2A
VCB=10V, f=1MHz
IC=1mA, IE=0
IC=5mA, RBE=∞
IE=1mA, IC=0
IC=10A, IB=2A, L=50µH
IC=10A, IB1=2A, L=200µH, IB2=–2A, clamped
IC=2.4A, IB1=0.48A, L=200µH, IB2=–0.48A,
clamped
15*
8
18
160
800
500
7
500
500
550
Turn-ON Time
ton
IC=7A, IB1=0.14A, IB2=–1.4A,
RL=28.6Ω, VCC=200V
Storage Time
tstg
IC=7A, IB1=0.14A, IB2=–1.4A,
RL=28.6Ω, VCC=200V
Fall Time
tf
IC=7A, IB1=0.14A, IB2=–1.4A,
RL=28.6Ω, VCC=200V
* The hFE1 of the 2SC3090 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
max
10
10
50*
1.0
1.5
1.0
3.0
1.0
Unit
µA
µA
V
V
MHz
pF
V
V
V
V
V
V
µs
µs
µs
15 L 30
20 M 40 30 N 50
No.1013-2/4
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2SC3090
No.1013-3/4
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DataSheet26.com | 2020 | Контакты | Поиск |