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PDF AO9926B Data sheet ( Hoja de datos )
| Número de pieza | AO9926B | |
| Descripción | 20V Dual N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO9926B
20V Dual N-Channel MOSFET
General Description
The AO9926B uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V while retaining a 12V
VGS(MAX) rating. This device is suitable for use as a uni-
directional or bi-directional load switch.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS=2.5V)
RDS(ON) (at VGS=1.8V)
20V
7.6A
< 23mΩ
< 26mΩ
< 34mΩ
< 52mΩ
Top View
SOIC-8
Bottom View
Top View
S2 1 8
G2 2 7
S1 3 6
G1 4 5
D2
D2
D1
D1
G1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±12
7.6
6.1
38
2
1.28
-55 to 150
D1 D2
G2
S1
S2
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
Units
62.5
°C/W
90 °C/W
40 °C/W
Rev 3: July 2010
www.aosmd.com
Page 1 of 5
1 page  
AO9926B
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
R esistive Switching Test Circuit & W aveform s
RL
Vds
DUT
+
Vdd
VDC
-
Vgs
td(on) tr
ton
td(off)
tf
toff
Charge
90%
10%
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & W aveform s
Vgs
Q rr = - Idt
+
Vdd
VDC
-
Isd
Vds
I F trr
dI/dt
I RM
Vdd
Rev 3: July 2010
www.aosmd.com
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO9926B.PDF ] | |
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