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NCE0160S PDF даташит

Спецификация NCE0160S изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «NCE N-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв NCE0160S
Описание NCE N-Channel Enhancement Mode Power MOSFET
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

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NCE0160S Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE0160S
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE0160S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
GENERAL FEATURES
VDS = 100V,ID =60A
RDS(ON) <16m@ VGS=12.6V
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
100% UIS TESTED!
100% ΔVds TESTED!
Schematic diagram
Marking and pin Assignment
PowerPAK SO-8 Bottom view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE0160
NCE0160S
PowerPAK SO-8
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Symbol
VDS
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=70)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (70)
IDM
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
100
±20
60
50
80
105
0.70
550
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Thermal Characteristic
Wuxi NCE Power Semiconductor Co., Ltd
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NCE0160S Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE0160S
Thermal Resistance,Junction-to- Case (Note 2)
RθJc 1.43 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
VGS=±20V,VDS=0V
100 110
--
--
-
1
±100
V
μA
nA
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=30A
VDS=15V,ID=10A
2.5 3.7
- 12.6
- 30
4.5
16
-
V
m
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=50V,VGS=0V,
F=1.0MHz
- 2850
- 220
-
-
PF
PF
Crss
- 90
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=5A,RL=10
VGS=10V,RG=1
VDS=50V,ID=10A,
VGS=10V
- 17
- 10
- 26
- 10
- 47
- 13
- 12.5
-
-
-
-
-
--
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=4A
- - 1.2
V
IS
--
60
A
trr
TJ = 25°C, IF = 10A
- - 60 nS
Qrr di/dt = 100A/μs(Note3) - - 200 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=50V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
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NCE0160S Даташит, Описание, Даташиты
http://www.ncepower.com
Test circuit
1EAS test Circuits
Pb Free Product
NCE0160S
2Gate charge test Circuit:
3Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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