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Datasheet HCPL-0720-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
HCP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HCP | Switchmode Power Supplies
HCP Series
· Solid Aluminium Electrolytic Capacitor with Conductive Polymer · Ultra low ESR · High Ripple Current · Switchmode Power Supplies, Computer, DC/DC Converter · Noise Suppression in Smoothing / High-Frequency Circuits
lower ESR miniaturized
CD 284 XY
HCP
HPM
I  Jianghai Europe GmbH data | | |
| 2 | HCP10C60 | Silicon Controlled Rectifier
Shantou Huashan Electronic Devices Co.,Ltd.
HCP10C60
Silicon Controlled Rectifier
¨€
Features
* Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=10A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type
¨€
General Description
Standard  ETC rectifier | | |
| 3 | HCP12C60 | Silicon Controlled Rectifier
Shantou Huashan Electronic Devices Co.,Ltd.
HCP12C60
Silicon Controlled Rectifier
█ Features
* Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=12A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type
█ General Description
Standard gate t ETC rectifier | | |
| 4 | HCP12NK65V | N-Channel MOSFET HCP12NK65V
Apr 2014
HCP12NK65V
650V N-Channel Super Junction MOSFET
BVDSS = 650 V RDS(on) typ = 0.34 ȍ ID = 12 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics �  SemiHow mosfet | | |
| 5 | HCP20C60 | Silicon Controlled Rectifier
Shantou Huashan Electronic Devices Co.,Ltd.
HCP20C60
Silicon Controlled Rectifier
█ Features
* Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=20A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type
█ General Description
Standard gate t  SHANTOU HUASHAN ELECTRONIC DEVICES rectifier | | |
| 6 | HCP20NT60V | N-Channel MOSFET HCP20NT60V
Apr 2014
HCP20NT60V
600V N-Channel Super Junction MOSFET
BVDSS = 600 V RDS(on) typ = 0.17 ȍ ID = 20 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics � SemiHow mosfet | | |
| 7 | HCP60R750V | 600V N-Channel Super Junction MOSFET HCP60R750V
HCP60R750V
600V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe O SemiHow mosfet | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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