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PDF AM8958 Data sheet ( Hoja de datos )
| Número de pieza | AM8958 | |
| Descripción | N+P PAIR ENHANCEMENT MODE MOSFET | |
| Fabricantes | AiT Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AM8958 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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AiT Semiconductor Inc.
www.ait-ic.com
AM8958
MOSFET
N+P PAIR ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM8958 is the N & P-Channel enhancement
mode power field effect transistor using high cell
density DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching
performance. This device is particularly suited for
low voltage application such as notebook computer
power management and other battery powered
circuits, where high-side switching, low inline power
loss and resistance to transient are needed.
The AM8958 is available in SOP8 Package
N-Channel
30V /6.8A, RDS(ON) = 23mΩ(typ.)@VGS = 10V
30V /6.5A, RDS(ON) = 34mΩ(typ.)@VGS = 4.5V
P-Channel
-30V / -6.5A, RDS(ON) = 35mΩ(typ.)@VGS = -10V
-30V / -4.4A, RDS(ON) = 60mΩ(typ.)@VGS = -4.5V
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
Available in SOP8 Package
APPLICATION
ORDERING INFORMATION
Package Type
Part Number
SOP-8
AM8958M8R
M8
AM8958M8VR
Note
R: Tape & Reel
V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
Power Management in Note book
Portable Equipment
Battery Powered System
P-CHANNEL MOSFET
N-Channle
P-Channle
REV1.0
- JUL 2010 RELEASED –
-1-
1 page  
AiT Semiconductor Inc.
www.ait-ic.com
AM8958
MOSFET
N+P PAIR ENHANCEMENT MODE
TYPICAL CHARACTERISTICS
N-Channel
1. Output Characteristics
2. Drain Source On Resistance
3. Drain Source On Resistance
4. Gate Threshold Voltage
5. Gate Charge
6. Drain Source On Resistance
REV1.0
- JUL 2010 RELEASED –
-5-
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AM8958.PDF ] | |
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