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PDF AM4435 Data sheet ( Hoja de datos )
| Número de pieza | AM4435 | |
| Descripción | -30V P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | AiT Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AM4435 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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AiT Semiconductor Inc.
www.ait-ic.com
AM4435
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM4435 is the P-Channel logic enhancement
mode power field effect transistor is produced
using high cell density. Advanced trench
-30V/-8.0A, RDS(ON)=16mΩ(typ)@VGS =-10V
-30V/-5.0A, RDS(ON)=26mΩ(typ)@VGS =-4.5V
Super high density cell design for extremely low
technology to provide excellent RDS(ON).
RDS(ON)
Exceptional on-resistance and maximum DC
These devices are particularly suited for low
current capability
voltage application such as cellular phone and
Full RoHS compliance
notebook computer power management and other Available in SOP8 Package
batter powered circuits where high-side switching.
APPLICATION
The AM4435 is available in SOP8 Package
ORDERING INFORMATION
Package Type
Part Number
SOP-8
AM4435M8R
M8
AM4435M8VR
Note
R: Tape & Reel
V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
Inverter
Synchronous Buck
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
P-CHANNEL MOSFET
REV1.0
- JUN 2010 RELEASED –
-1-
1 page  
AiT Semiconductor Inc.
www.ait-ic.com
TYPICAL CHARACTERISTICS
TA=25℃ Unless Specified
1. Output Characteristics
AM4435
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
2. Transfer Characteristics
3. Drain Source On Resistance
4. Gate Threshold Voltage
5. Gate Charge
6. Drain Source On Resistance
REV1.0
- JUN 2010 RELEASED –
-5-
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AM4435.PDF ] | |
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