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PDF AM4407 Data sheet ( Hoja de datos )
| Número de pieza | AM4407 | |
| Descripción | -30V P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | AiT Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AM4407 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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AiT Semiconductor Inc.
www.ait-ic.com
AM4407
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The AM4407 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. Advanced trench technology to
provide excellent RDS(ON).
This high density process is especially tailored to
minimize on-state resistance.
FEATURES
30V/-12.0A, RDS(ON) = 12mΩ(typ)@VGS =-10V
-30V/-7.5A, RDS(ON) = 19mΩ(typ)@VGS =-4.5V
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and maximum DC
current capability
Available in SOP8 Package
These devices are particularly suited for low voltage
application, and low in-line power loss are needed in
a very small outline surface mount package.
The AM4407 is available in SOP8 Package
APPLICATION
High Frequency Point-of-Load Synchronous
New working DC-DC Power System
Load Switch
ORDERING INFORMATION
P CHANNEL MOSFET
Package Type
Part Number
SOP8
AM4407M8R
M8
AM4407M8VR
Note
R: Tape & Reel
V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
REV1.0
- SEP 2010 RELEASED –
-1-
1 page  
AiT Semiconductor Inc.
www.ait-ic.com
AM4407
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE
TYPICAL CHARACTERISTICS
TA=25°C Unless specified
1. Output Characteristics
2. Drain-Source On Resistance
3. Drain Source On Resistance
4. Transfer Characteristics
5. Gate Charge
6. Drain Source Resistance
REV1.0
- SEP 2010 RELEASED –
-5-
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AM4407.PDF ] | |
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