AM3407 PDF даташит
Спецификация AM3407 изготовлена «AiT Semiconductor» и имеет функцию, называемую «-30V P-CHANNEL ENHANCEMENT MODE MOSFET». |
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Детали детали
Номер произв | AM3407 |
Описание | -30V P-CHANNEL ENHANCEMENT MODE MOSFET |
Производители | AiT Semiconductor |
логотип |
7 Pages
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AiT Semiconductor Inc.
www.ait-ic.com
AM3407
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
FEATURES
The AM3407 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. Advanced trench technology to
provide excellent RDS(ON). This device is suitable for
use as a load switch or in applications.
AM3407 is available in a SOT-23 package.
-30V/-4.3A, RDS(ON)=44mΩ(typ.)@VGS=-10V
-30V/-3.0A, RDS(ON)=70mΩ(typ.)@VGS=-4.5V
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
Available in a SOT-23 package.
ORDERING INFORMATION
APPLICATIONS
Package Type
Part Number
SOT-23
AM3407E3R
E3
AM3407E3VR
Note
V: Halogen free Package
R: Tape & Reel
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
Cellular/Portable
Load Switch
PIN DESCRIPTION
REV2.0
- JUN 2010 RELEASED, NOV 2014 UPDATED -
-1-
No Preview Available ! |
AiT Semiconductor Inc.
www.ait-ic.com
PIN DESCRIPTION
AM3407
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE MOSFET
Pin #
1
2
3
Symbol
G
S
D
Top View
Function
Gate
Source
Drain
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise noted
VDSS, Drain-Source Voltage
-30V
VGSS, Gate-Source Voltage
±20V
ID, Continuous Drain Current (VGS=-10V)NOTE1
TC=25℃
TC=70℃
-4.3A
-3.5A
IDM, Pulsed Drain Current NOTE2
-20A
PD, Power Dissipation
TA=25oC
TA=70℃
1.5W
0.9W
TJ, Operation Junction Temperature
-55℃~150℃
TSTG, Storage Temperature Range
-55℃~150℃
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE1: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C.
NOTE2: The data tested by pulsed , pulse width≦300uS , duty cycle≦2%
REV2.0
- JUN 2010 RELEASED, NOV 2014 UPDATED -
-2-
No Preview Available ! |
AiT Semiconductor Inc.
www.ait-ic.com
AM3407
MOSFET
-30V P-CHANNEL ENHANCEMENT MODE MOSFET
THERMAL CHARACTERISTICS
Parameter
Symbol
Typ.
Thermal Resistance-Junction to Ambient Steady-State
RθJA
-
Thermal Resistance Junction to Lead
Steady-State
RθJL
-
NOTE3: The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
Max Units
125 °C/W
80 °C/W
ELECTRICAL CHARACTERISTICS
TJ = 25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min Typ. Max
Static Parameters
Drain-Source Breakdown Voltage
V(BV)DSS VGS=0V,ID=-250μA
-30 -
-
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=-250μA
-1.0 - -2.0
Gate Leakage Current
IGSS VDS=0V, VGS=±8V
- - ±100
Zero Gate Voltage, Drain-Source
Leakage Current
VDS=-24V,VGS=0V
TJ=25°C
IDSS
VDS=-24V,VGS=0V
TJ=55°C
- - -1
- - -5
Drain-source On-ResistanceNOTE2
RDS(ON)
VGS=-10V,ID=-4.3A
VGS=-4.5V,ID=-3.0A
44 54
-
70 85
Forward Transconductance
gFS VDS=-5V, ID=-3A
- 11 -
Source-Drain Doide
Diode Forward Voltage
VSD IS=-1A,VGS=0V
- -0.7 -1.0
Continuous Source Current NOTE1,3
IS
- - -3.5
Dynamic Parameters
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG(-4.5V)
QGS
QGD
VDS=-15V,VGS=-4.5V,
ID=-3.0A
- 6.5 -
- 2.4 -
- 2.0 -
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=-15V,VGS=0V,
f=1MHz
- 592 -
- 102 -
- 81 -
Turn-On Time
tD(ON)
tR
VDD=-15V,ID=-3A,
- 2.9 -
- 8.4 -
Turn-Off Time
tD(OFF)
tF
VGEN=-4.5V,RG=3.3Ω
- 40 -
- 6.2 -
NOTE3: The data is theoretically the same as ID and IDM, in real applications , should be limited by total power dissipation
The EAS data show Max. rating. The test condition is VDD=-25, VGS=-10V, L=0.1mH
Units
V
V
nA
μA
mΩ
S
V
A
nC
pF
ns
μA
REV2.0
- JUN 2010 RELEASED, NOV 2014 UPDATED -
-3-
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