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AM3406 PDF даташит

Спецификация AM3406 изготовлена ​​​​«AiT Semiconductor» и имеет функцию, называемую «30V N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв AM3406
Описание 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Производители AiT Semiconductor
логотип AiT Semiconductor логотип 

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AM3406 Даташит, Описание, Даташиты
AiT Semiconductor Inc.
www.ait-ic.com
AM3406
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
DESCRIPTION
FEATURES
The AM3406 is the N-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. Advanced trench technology to
provide excellent RDS(ON).
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application, and low
in-line power loss are needed in a very small outline
surface mount package.
30V/6.0A, RDS(ON) = 20mΩ(typ.) @VGS = 10V
30V/4.8A, RDS(ON) = 27mΩ(typ.) @VGS = 4.5V
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
This is a Full Green compliance
Available in SOT-23 Package
APPLICATIONS
The AM3406 is available in SOT-23 Package.
ORDERING INFORMATION
Package Type
Part Number
SOT-23
AM3406E3R
E3
AM3406E3VR
Note
R : Tape & Reel
V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
Power Management in Note book
Portable Equipment
DSC
LCD Display inverter
Battery Powered System
DC/DC Converter
P CHANNEL MOSFET
N-Channel
REV1.0
- MAR 2011 RELEASED -
-1-









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AM3406 Даташит, Описание, Даташиты
AiT Semiconductor Inc.
www.ait-ic.com
PIN DESCRIPTION
AM3406
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
Pin #
1
2
3
Top View
Symbol
G
S
D
Function
Gate
Source
Drain
REV1.0
- MAR 2011 RELEASED -
-2-









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AM3406 Даташит, Описание, Даташиты
AiT Semiconductor Inc.
www.ait-ic.com
AM3406
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted
VDSS, Drain-Source Voltage
30V
VGSS, Gate-Source Voltage
±20V
ID, Continuous Drain Current (TJ=150)
VGS = 10V
6.0A
IDM, Pulsed Drain Current
10A
IS, Continuous Source Current (Diode Conduction)
5.0A
PD, Power Dissipation
TA = 25oC
1.25W
TA = 70oC
0.8W
TJ, Operation Junction Temperature
150
TSTG, Storage Temperature Range
-55~ 150
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
THERMAL DATA
Symbol
RθJA
Parameter
Thermal Resistance-Junction to Ambient
Max Unit
90 /W
REV1.0
- MAR 2011 RELEASED -
-3-










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