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AM3400 PDF даташит

Спецификация AM3400 изготовлена ​​​​«AiT Semiconductor» и имеет функцию, называемую «30V N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв AM3400
Описание 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Производители AiT Semiconductor
логотип AiT Semiconductor логотип 

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AM3400 Даташит, Описание, Даташиты
AiT Semiconductor Inc.
www.ait-ic.com
 
AM3400
MOSFET
30V N-CHANNEL ENHANCEMENT MODE
 
DESCRIPTION
The AM3400 is the N-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. Advanced trench technology to
provide excellent RDS(ON).
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application, and low
in-line power loss are needed in a very small outline
surface mount package.
FEATURES
30V/5.8A, RDS(ON) =28mΩ(typ.)@VGS =10V
30V/5.0A, RDS(ON) =30mΩ(typ.)@VGS =4.5V
30V/3.5A, RDS(ON) =40mΩ(typ.)@VGS =2.5V
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
Available in SOT-23 package
The AM3400 is available in SOT-23 package.
ORDERING INFORMAITON
Package Type
Part Number
SOT-23
AM3400E3R
E3
AM3400E3VR
Note
V: Green Package
R : Tape & Reel
AiT provides all Pb free products
Suffix “ V “ means Green Package
APPLICATIONS
Power Management in Note book
Portable Equipment
DSC
LCD Display inverter
Battery Powered System
DC/DC Converter
N CHANNEL MOSFET
REV1.0
 
-JUL 2010 RELEASED -
-1-









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AM3400 Даташит, Описание, Даташиты
AiT Semiconductor Inc.
www.ait-ic.com
 
 
PIN DESCRIPTION
AM3400
MOSFET
30V N-CHANNEL ENHANCEMENT MODE
Pin #
1
2
3
Top View
 
Symbol
G
S
D
Gate
Source
Drain
Function
REV1.0
 
-JUL 2010 RELEASED -
-2-









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AM3400 Даташит, Описание, Даташиты
AiT Semiconductor Inc.
www.ait-ic.com
 
 
ABSOLUTE MAXIMUM RATINGS
AM3400
MOSFET
30V N-CHANNEL ENHANCEMENT MODE
TA = 25℃ Unless otherwise specified
VDSS, Drain-Source Voltage
30V
VGSS, Gate-Source Voltage
±12V
ID, Continuous Drain Current (TJ=150°C)
VGS=10V
5.8A
IDM, Pulsed Drain Current
25A
IS, Continuous Source Current (Diode Conduction)
1.7A
PD, Power Dissipation
TA=25°C
1.25W
TA=70°C
0.8W
TJ, Operation Junction Temperature
150°C
TSTG, Storage Temperature Range
-55/150°C
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL INFORMATION
Parameter
Thermal Resistance-Junction to Ambient
Symbol
RθJA
Max Unit
90 ℃/W
REV1.0
 
-JUL 2010 RELEASED -
-3-










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