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PDF AM2342 Data sheet ( Hoja de datos )
| Número de pieza | AM2342 | |
| Descripción | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | AiT Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AM2342 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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AiT Semiconductor Inc.
www.ait-ic.com
AM2342
MOSFET
20V N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM2342 is the N-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. Advanced trench technology to
provide excellent RDS(ON).
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application, and
low in-line power loss are needed in a very small
outline surface mount package.
20V/5.0A, RDS(ON) =25mΩ(typ.)@VGS =4.5V
20V/4.5A, RDS(ON) =34mΩ(typ.)@VGS =2.5V
20V/4.0A, RDS(ON) =48mΩ(typ.)@VGS =1.8V
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
Available in SOT-23 Package
APPLICATION
AM2342 is available in SOT-23 packages.
ORDER INFORMATION
Package Type
Part Number
SOT-23
AM2342E3R
E3
AM2342E3VR
Note
V: Green Package
R : Tape & Reel
AiT provides all Pb free products
Suffix “ V “ means Green Package
Power Management in Note book
Portable Equipment
DSC
LCD Display inverter
Battery Powered System
DC/DC Converter
N CHANNEL MOSFET
REV1.0
- JUL 2010 RELEASED -
-1-
1 page  
AiT Semiconductor Inc.
www.ait-ic.com
AM2342
MOSFET
20V N-CHANNEL ENHANCEMENT MODE
TYPICAL CHARACTERISTICS
TA=25℃ Unless specified
1. Output Characteristics
2. Drain-Source On Resistance
3. Drain Source On Resistance
4. Gate Threshold Voltage
5. Gate Charge
6. Drain Source On Resistance
REV1.0
- JUL 2010 RELEASED -
-5-
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AM2342.PDF ] | |
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