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PDF AM2317 Data sheet ( Hoja de datos )
| Número de pieza | AM2317 | |
| Descripción | -20V P-CHANNEL ENHANCEMENT MODE MOSFET MOSFET | |
| Fabricantes | AiT Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AM2317 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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AiT Semiconductor Inc.
www.ait-ic.com
AM2317
MOSFET
-20V P-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
FEATURES
The AM2317 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density advanced trench technology.
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application, and low
in-line power loss are needed in a very small outline
surface mount package.
-20V/-4.6A, RDS(ON)=35mΩ(typ.)@VGS=-4.5V
-20V/-4.1A,RDS(ON)=45mΩ(typ.)@VGS=-2.5V
-20V/-3.6A,RDS(ON)=53mΩ(typ.)@VGS=-1.8V
Super high design for extremely low RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
Full RoHS compliance
Available in SOT-23 Package
The AM2317 is available in SOT-23 package.
ORDERING INFORMATION
Package Type
Part Number
SOT-23
AM2317E3R
E3
AM2317E3VR
Note
V: Halogen free Package
R: Tape & Reel
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
APPLICATION
Power Management
Portable Equipment
DC/DC Converter
Load Switch
DSC
LCD Display inverter
TYPICAL APPLICATION
REV2.0
- NOV 2011 RELEASED, MAY 2013 UPDATED -
P-Channel
-1-
1 page  
AiT Semiconductor Inc.
www.ait-ic.com
AM2317
MOSFET
-20V P-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL PERFORMANCE CHARACTERISTICS
25℃, Unless Note
1. Output Characteristics
2. Drain-Source On Resistance
3. Drain Source On Resistance
4. Transfer Characteristics
5. Gate Charge
6. Drain Source Resistance
REV2.0
- NOV 2011 RELEASED, MAY 2013 UPDATED -
-5-
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AM2317.PDF ] | |
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