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AM2301 PDF даташит

Спецификация AM2301 изготовлена ​​​​«AiT Semiconductor» и имеет функцию, называемую «-20V P-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв AM2301
Описание -20V P-CHANNEL ENHANCEMENT MODE MOSFET
Производители AiT Semiconductor
логотип AiT Semiconductor логотип 

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AM2301 Даташит, Описание, Даташиты
AiT Semiconductor Inc.
www.ait-ic.com
 
AM2301
MOSFET
-20V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The AM2301 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. Advanced trench technology to
provide excellent RDS(ON).
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application, and low
in-line power loss are needed in a very small outline
surface mount package.
FEATURES
-20V/-3.2A, RDS(ON)=90mΩ(typ.)@VGS =-4.5V
-20V/-2.0A, RDS(ON)=130mΩ(typ.)@VGS =-2.5V
Super high density cell design for extremely
low RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
This is a Green compliance
Available in a SOT-23 package.
AM2301 is available in a SOT-23 package.
ORDERING INFORMATION
Package Type
Part Number
SOT-23
AM2301E3R
E3
AM2301E3VR
Note
R: Tape & Reel
V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
APPLICATION
Power Management in Note book
Portable Equipment
DSC
LCD Display inverter
Battery Powered System
DC/DC Converter
Load Switch
P CHANNEL MOSFET
REV1.0
 
- JUN 2010 RELEASED –
-1-









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AM2301 Даташит, Описание, Даташиты
AiT Semiconductor Inc.
www.ait-ic.com
 
PIN DESCRIPTION
AM2301
MOSFET
-20V P-CHANNEL ENHANCEMENT MODE
Pin #
1
2
3
Symbol
G
S
D
Top View
Function
Gate
Source
Drain
REV1.0
 
- JUN 2010 RELEASED –
-2-









No Preview Available !

AM2301 Даташит, Описание, Даташиты
AiT Semiconductor Inc.
www.ait-ic.com
 
AM2301
MOSFET
-20V P-CHANNEL ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS
TA = 25℃ Unless otherwise specified
VDSS, Drain-Source Voltage
-20V
VGSS, Gate-Source Voltage
±12V
ID, Continuous Drain Current (TJ=150°C)
VGS=-4.5V
-3.2A
IDM, Pulsed Drain Current
-10A
IS, Continuous Source Current (Diode Conduction)
-1.6A
PD, Power Dissipation
TA=25°C
1.25W
TA=70°C
0.8W
TJ, Operation Junction Temperature
150°C
TSTG, Storage Temperature Range
-55/150°C
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device.
These are stress ratings only and operations of the device at these or any other conditions beyond those indicated in the operational
sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
THERMAL INFORMATION
Symbol
θJA
Max Unit
120 ℃/W
REV1.0
 
- JUN 2010 RELEASED –
-3-










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