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PDF IXTP18P10T Data sheet ( Hoja de datos )
| Número de pieza | IXTP18P10T | |
| Descripción | Power MOSFETs | |
| Fabricantes | IXYS | |
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TrenchPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTY18P10T
IXTA18P10T
IXTP18P10T
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Maximum Ratings
-100
-100
V
V
±15 V
±25 V
-18 A
- 60 A
-18 A
200 mJ
83 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13 / 10
°C
°C
Nm/lb.in.
0.35 g
2.50 g
3.00 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ± 15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.5
- 4.5 V
±50 nA
- 3 μA
-100 μA
120 mΩ
VDSS =
ID25 =
≤RDS(on)
-100V
-18A
120mΩ
TO-252 (IXTY)
G
S
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z Avalanche Rated
z Extended FBSOA
z Fast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z High-Side Switching
z Push Pull Amplifiers
z DC Choppers
z Automatic Test Equipment
z Current Regulators
z Battery Charger Applications
© 2013 IXYS CORPORATION, All Rights Reserved
DS99966C(01/13)
1 page  
29
28
27
26
25
24
23
22
21
20
25
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
RG = 10Ω , VGS = -10V
VDS = - 50V
I D = -18A
I D = - 9A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
30 80
28 t r td(on) - - - -
TJ = 125ºC, VGS = -10V
26 VDS = - 50V
70
60
24
I D = -18A, - 9A
22
50
40
20 30
18 20
16 10
14 0
10 12 14 16 18 20 22 24 26 28 30
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
27 54
26
t f td(off) - - - -
51
RG = 10Ω, VGS = -10V
25
VDS = - 50V
48
24 45
23 42
22 TJ = 25ºC
39
21
TJ = 125ºC
36
20 33
19
-9
30
-10 -11 -12 -13 -14 -15 -16 -17 -18
ID - Amperes
IXTY18P10T IXTA18P10T
IXTP18P10T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
30
29 RG = 10Ω , VGS = -10V
VDS = - 50V
28
27
TJ = 25ºC
26
25
24
TJ = 125ºC
23
22
21
-9
-10 -11 -12 -13 -14 -15 -16 -17
ID - Amperes
-18
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
25 54
t f td(off) - - - -
24
RG = 10Ω, VGS = -10V
50
VDS = - 50V
23 46
22 I D = -18A, - 9A 42
21 38
20 34
19 30
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
65 110
60 t f
td(off) - - - -
55 TJ = 125ºC, VGS = -10V
50 VDS = - 50V
45 I D = - 9A, -18A
100
90
80
70
40 60
35 50
30 40
25 30
20 20
15 10
10 12 14 16 18 20 22 24 26 28 30 32 34
RG - Ohms
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTP18P10T.PDF ] | |
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