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BTS50055-1TMA PDF даташит

Спецификация BTS50055-1TMA изготовлена ​​​​«Infineon Technologies» и имеет функцию, называемую «Smart Highside High Current Power Switch».

Детали детали

Номер произв BTS50055-1TMA
Описание Smart Highside High Current Power Switch
Производители Infineon Technologies
логотип Infineon Technologies логотип 

18 Pages
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BTS50055-1TMA Даташит, Описание, Даташиты
Data Sheet BTS50055-1TMA
Smart Highside High Current Power Switch Reversave
Features
Overload protection
Current limitation
Short circuit protection
Over temperature protection
Over voltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads 1)
Low ohmic inverse current operation
Reversave(Reverse battery protection)
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of Vbb protection 2)
Electrostatic discharge (ESD) protection
Green product (RoHS compliant)
AEC qualified
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(AZ)
VON(CL)
Vbb(on)
RON
IL(ISO)
IL(SC)
IL : IIS
62 V
42 V
5.0 ... 34 V
6.0 m
70 A
130 A
14 000
PG-TO220-7-4
Application
Power switch with current sense diagnostic
feedback for 12 V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
Replaces electromechanical relays, fuses and discrete circuits
1
SMD
7
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOSchip on chip technology. Providing embedded protective functions.
4 & Tab
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
R bb
+ Vbb
Voltage
sensor
3 IN
ESD
Logic
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
OUT 1,2,6,7
IL
Load
I IN Temperature
sensor
VIN
VIS
Logic GND
I IS
IS
5
RIS
PROFET
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1of 18
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2010-April-27









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BTS50055-1TMA Даташит, Описание, Даташиты
Pin
1
2
3
4
5
6
7
Data Sheet BTS50055-1TMA
Symbol
OUT
OUT
IN
Vbb
IS
OUT
OUT
Function
O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
O Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
I Input; has an internal pull up; activates the power switch in case of short to
ground
+
Supply voltage; positive power supply voltage; tab and pin 4 are internally
shorted; in high current applications use the tab 4).
S Sense Output; Diagnostic feedback; provides a sense current proportional
to the load current; zero current on failure (see Truth Table on page 7)
O
Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
O
Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Supply voltage (over voltage protection see page 4)
Supply voltage for short circuit protection,
Tj,start =-40 ...+150°C: (see diagram on page 10)
Load current (short circuit current, see page 5)
Load dump protection VLoadDump = VA + Vs, VA = 13.5 V
RI5) = 2 , RL = 0.54 , td = 200 ms,
IN, IS = open or grounded
Vbb
Vbb
IL
VLoad dump6)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC 25 °C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.,
IL = 20 A, ZL = 7.5 mH, 0 , see diagrams on page 10
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
Tj
Tstg
Ptot
EAS
VESD
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 8 and 9
IIN
IIS
Values Unit
42 V
34 V
self-limited A
75 V
-40 ...+150
-55 ...+150
170
°C
W
1.5 J
4 kV
+15 , -250 mA
+15 , -250
3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
4) Otherwise add up to 0.7 m(depending on used length of the pin) to the RON if the pin is used instead of the
tab.
5) RI = internal resistance of the load dump test pulse generator.
6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Infineon Technologies AG
Page 2
2010-April-27









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BTS50055-1TMA Даташит, Описание, Даташиты
Data Sheet BTS50055-1TMA
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC 7)
junction - ambient (free air): RthJA
SMD version, device on PCB 8):
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Values
min typ max
-- -- 0.75
-- 60
--
-- 33 40
Unit
K/W
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7, see
measurement circuit page 7)
IL = 20 A, Tj = 25 °C: RON
VIN = 0, IL = 20 A, Tj = 150 °C:
IL = 90 A, Tj = 150 °C:
Vbb = 6V 9), IL = 20 A, Tj = 150 °C:
Nominal load current 10) (Tab to pins 1, 2, 6, 7)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 11)
Nominal load current 10), device on PCB 8)
TA = 85 °C, Tj 150 °C VON 0.5 V,
Maximum load current in resistive range
(Tab to pins 1, 2, 6, 7)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 13
VON = 1.8 V, Tc = 150 °C:
Turn-on time12)
IIN to 90% VOUT:
Turn-off time
IIN to 10% VOUT:
RL = 1 , Tj =-40...+150°C
Slew rate on 12) (10 to 30% VOUT )
RL = 1 , TJ = 25 °C
Slew rate off 12) (70 to 40% VOUT )
RL = 1 , TJ = 25 °C
RON(Static)
IL(ISO)
IL(NOM)
IL(Max)
ton
toff
dV/dton
-dV/dtoff
--
--
55
13.6
250
150
80
30
--
--
4.4 6.0 m
7.9 10.5
-- 10.7
10 17
70 -- A
17 --
-- --
-- --
-- 400
-- 110
A
A
µs
0.7 -- V/µs
1.1 -- V/µs
7) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
8) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
9) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
10) not subject to production test, specified by design
11) TJ is about 105°C under these conditions.
12) See timing diagram on page 14.
Infineon Technologies AG
Page 3
2010-April-27










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